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Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates

Goodings, C., Mizuta, Hiroshi, Cleaver, J. R. A. and Ahmed, H. (1993) Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates At The 10th International Conference on Electronic Properties of Two-Dimensional Systems.

Record type: Conference or Workshop Item (Other)

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More information

Published date: July 1993
Additional Information: Event Dates: June 1993
Venue - Dates: The 10th International Conference on Electronic Properties of Two-Dimensional Systems, 1993-06-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266429
URI: http://eprints.soton.ac.uk/id/eprint/266429
PURE UUID: 7416d496-cada-499b-ae2b-796200df22f8

Catalogue record

Date deposited: 30 Jul 2008 09:37
Last modified: 18 Jul 2017 07:16

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Contributors

Author: C. Goodings
Author: Hiroshi Mizuta
Author: J. R. A. Cleaver
Author: H. Ahmed

University divisions

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