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Theoretical analysis of transconductance enhancement due to electron concentration dependent screening in heavily doped systems

Theoretical analysis of transconductance enhancement due to electron concentration dependent screening in heavily doped systems
Theoretical analysis of transconductance enhancement due to electron concentration dependent screening in heavily doped systems
Ho, S.
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Moriyoshi, A.
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Ohbu, I.
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Kagaya, O.
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Mizuta, Hiroshi
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Yamaguchi, K.
817d4eee-95a7-41c3-9d6e-18ca2eac715d
Ho, S.
1fea5087-d1be-42e8-b5f7-c4c886f0d825
Moriyoshi, A.
6266b774-c4e4-45d7-abb6-6e1ae27b7a24
Ohbu, I.
9b897ac6-3fd6-454b-9665-64cab7466581
Kagaya, O.
f148d3a3-fc64-4940-96ee-c61b432eddae
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Yamaguchi, K.
817d4eee-95a7-41c3-9d6e-18ca2eac715d

Ho, S., Moriyoshi, A., Ohbu, I., Kagaya, O., Mizuta, Hiroshi and Yamaguchi, K. (1993) Theoretical analysis of transconductance enhancement due to electron concentration dependent screening in heavily doped systems. Int. Workshop on VLSI Process and Device Modeling, Nara, Nara.

Record type: Conference or Workshop Item (Other)

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More information

Published date: July 1993
Additional Information: Event Dates: July 1993
Venue - Dates: Int. Workshop on VLSI Process and Device Modeling, Nara, Nara, 1993-06-30
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266430
URI: http://eprints.soton.ac.uk/id/eprint/266430
PURE UUID: ed948662-acde-48bb-8842-374d7d84f212

Catalogue record

Date deposited: 30 Jul 2008 09:41
Last modified: 10 Dec 2021 22:17

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Contributors

Author: S. Ho
Author: A. Moriyoshi
Author: I. Ohbu
Author: O. Kagaya
Author: Hiroshi Mizuta
Author: K. Yamaguchi

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