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Multiple-well RTD with InGaAs strained quantum wells

Multiple-well RTD with InGaAs strained quantum wells
Multiple-well RTD with InGaAs strained quantum wells
Tanoue, T.
745ebc42-6226-455d-8a88-93b4d40273d5
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Tanoue, T.
745ebc42-6226-455d-8a88-93b4d40273d5
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9

Tanoue, T. and Mizuta, Hiroshi (1990) Multiple-well RTD with InGaAs strained quantum wells. Advanced Heterostructure Device Workshop.

Record type: Conference or Workshop Item (Other)

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More information

Published date: November 1990
Additional Information: Event Dates: December 1990
Venue - Dates: Advanced Heterostructure Device Workshop, 1990-12-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266440
URI: https://eprints.soton.ac.uk/id/eprint/266440
PURE UUID: 10657b13-b8bb-40a6-bc76-b79c1c50ced4

Catalogue record

Date deposited: 30 Jul 2008 10:05
Last modified: 18 Jul 2017 07:16

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Contributors

Author: T. Tanoue
Author: Hiroshi Mizuta

University divisions

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