Theoretical analysis of peak-to-valley ratio degradation caused by scattering processes in multi-barrier resonant tunneling diodes
Theoretical analysis of peak-to-valley ratio degradation caused by scattering processes in multi-barrier resonant tunneling diodes
pp 274-283
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Tanoue, T.
745ebc42-6226-455d-8a88-93b4d40273d5
Takahashi, S.
9a65ca68-97d5-47d6-b8bc-a7f8f240997e
August 1989
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Tanoue, T.
745ebc42-6226-455d-8a88-93b4d40273d5
Takahashi, S.
9a65ca68-97d5-47d6-b8bc-a7f8f240997e
Mizuta, Hiroshi, Tanoue, T. and Takahashi, S.
(1989)
Theoretical analysis of peak-to-valley ratio degradation caused by scattering processes in multi-barrier resonant tunneling diodes.
IEEE/Cornell Conf. on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca.
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Published date: August 1989
Additional Information:
Event Dates: August 1989
Venue - Dates:
IEEE/Cornell Conf. on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, 1989-07-31
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266443
URI: http://eprints.soton.ac.uk/id/eprint/266443
PURE UUID: aa6ea923-84e5-47c4-8276-faf17affd869
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Date deposited: 30 Jul 2008 10:11
Last modified: 10 Dec 2021 22:17
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Contributors
Author:
Hiroshi Mizuta
Author:
T. Tanoue
Author:
S. Takahashi
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