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Theoretical analysis of peak-to-valley ratio degradation caused by scattering processes in multi-barrier resonant tunneling diodes

Theoretical analysis of peak-to-valley ratio degradation caused by scattering processes in multi-barrier resonant tunneling diodes
Theoretical analysis of peak-to-valley ratio degradation caused by scattering processes in multi-barrier resonant tunneling diodes
pp 274-283
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Tanoue, T.
745ebc42-6226-455d-8a88-93b4d40273d5
Takahashi, S.
9a65ca68-97d5-47d6-b8bc-a7f8f240997e
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Tanoue, T.
745ebc42-6226-455d-8a88-93b4d40273d5
Takahashi, S.
9a65ca68-97d5-47d6-b8bc-a7f8f240997e

Mizuta, Hiroshi, Tanoue, T. and Takahashi, S. (1989) Theoretical analysis of peak-to-valley ratio degradation caused by scattering processes in multi-barrier resonant tunneling diodes. IEEE/Cornell Conf. on Advanced Concepts in High Speed Semiconductor Devices and Circuits. pp 274-283 .

Record type: Conference or Workshop Item (Other)

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More information

Published date: August 1989
Additional Information: Event Dates: August 1989
Venue - Dates: IEEE/Cornell Conf. on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1989-08-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266443
URI: https://eprints.soton.ac.uk/id/eprint/266443
PURE UUID: aa6ea923-84e5-47c4-8276-faf17affd869

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Date deposited: 30 Jul 2008 10:11
Last modified: 18 Jul 2017 07:16

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