The influence of DX centers in heavily doped emitter of AlGaAs/GaAs heterojunction bipolar transistors
The influence of DX centers in heavily doped emitter of AlGaAs/GaAs heterojunction bipolar transistors
Kusano, C.
e6d696ce-bb30-4dc3-b99a-5df01c5f73ad
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Yamaguchi, K.
817d4eee-95a7-41c3-9d6e-18ca2eac715d
March 1989
Kusano, C.
e6d696ce-bb30-4dc3-b99a-5df01c5f73ad
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Yamaguchi, K.
817d4eee-95a7-41c3-9d6e-18ca2eac715d
Kusano, C., Mizuta, Hiroshi and Yamaguchi, K.
(1989)
The influence of DX centers in heavily doped emitter of AlGaAs/GaAs heterojunction bipolar transistors.
1989 American Physical Society Meeting.
Record type:
Conference or Workshop Item
(Poster)
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Published date: March 1989
Additional Information:
Event Dates: March 1989
Venue - Dates:
1989 American Physical Society Meeting, 1989-03-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266444
URI: http://eprints.soton.ac.uk/id/eprint/266444
PURE UUID: db585320-8a6e-4d15-a7ae-6297524e95cf
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Date deposited: 30 Jul 2008 10:13
Last modified: 10 Dec 2021 22:17
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Contributors
Author:
C. Kusano
Author:
Hiroshi Mizuta
Author:
K. Yamaguchi
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