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The influence of DX centers in heavily doped emitter of AlGaAs/GaAs heterojunction bipolar transistors

The influence of DX centers in heavily doped emitter of AlGaAs/GaAs heterojunction bipolar transistors
The influence of DX centers in heavily doped emitter of AlGaAs/GaAs heterojunction bipolar transistors
Kusano, C.
e6d696ce-bb30-4dc3-b99a-5df01c5f73ad
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Yamaguchi, K.
817d4eee-95a7-41c3-9d6e-18ca2eac715d
Kusano, C.
e6d696ce-bb30-4dc3-b99a-5df01c5f73ad
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Yamaguchi, K.
817d4eee-95a7-41c3-9d6e-18ca2eac715d

Kusano, C., Mizuta, Hiroshi and Yamaguchi, K. (1989) The influence of DX centers in heavily doped emitter of AlGaAs/GaAs heterojunction bipolar transistors. 1989 American Physical Society Meeting.

Record type: Conference or Workshop Item (Poster)

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More information

Published date: March 1989
Additional Information: Event Dates: March 1989
Venue - Dates: 1989 American Physical Society Meeting, 1989-03-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266444
URI: http://eprints.soton.ac.uk/id/eprint/266444
PURE UUID: db585320-8a6e-4d15-a7ae-6297524e95cf

Catalogue record

Date deposited: 30 Jul 2008 10:13
Last modified: 10 Dec 2021 22:17

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Contributors

Author: C. Kusano
Author: Hiroshi Mizuta
Author: K. Yamaguchi

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