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The influence of DX centers in heavily doped emitter of AlGaAs/GaAs heterojunction bipolar transistors

Kusano, C., Mizuta, Hiroshi and Yamaguchi, K. (1989) The influence of DX centers in heavily doped emitter of AlGaAs/GaAs heterojunction bipolar transistors At 1989 American Physical Society Meeting.

Record type: Conference or Workshop Item (Poster)

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Published date: March 1989
Additional Information: Event Dates: March 1989
Venue - Dates: 1989 American Physical Society Meeting, 1989-03-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266444
URI: http://eprints.soton.ac.uk/id/eprint/266444
PURE UUID: db585320-8a6e-4d15-a7ae-6297524e95cf

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Date deposited: 30 Jul 2008 10:13
Last modified: 18 Jul 2017 07:16

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Contributors

Author: C. Kusano
Author: Hiroshi Mizuta
Author: K. Yamaguchi

University divisions

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