Double negative resistance properties of a triple-well resonant tunneling diode
Double negative resistance properties of a triple-well resonant tunneling diode
Tanoue, T.
745ebc42-6226-455d-8a88-93b4d40273d5
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Takahashi, S.
9a65ca68-97d5-47d6-b8bc-a7f8f240997e
December 1988
Tanoue, T.
745ebc42-6226-455d-8a88-93b4d40273d5
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Takahashi, S.
9a65ca68-97d5-47d6-b8bc-a7f8f240997e
Tanoue, T., Mizuta, Hiroshi and Takahashi, S.
(1988)
Double negative resistance properties of a triple-well resonant tunneling diode.
Advanced Heterostructure Device Workshop Hawaii, Hawaii.
Record type:
Conference or Workshop Item
(Other)
This record has no associated files available for download.
More information
Published date: December 1988
Additional Information:
Event Dates: December 1988
Venue - Dates:
Advanced Heterostructure Device Workshop Hawaii, Hawaii, 1988-12-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266445
URI: http://eprints.soton.ac.uk/id/eprint/266445
PURE UUID: cd0f8455-1e30-4375-89e3-9c1663354518
Catalogue record
Date deposited: 30 Jul 2008 10:16
Last modified: 10 Dec 2021 22:17
Export record
Contributors
Author:
T. Tanoue
Author:
Hiroshi Mizuta
Author:
S. Takahashi
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.
View more statistics