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High performance GaAs hetero-buffered MESFET's grown by 2 growth zone

Hiruma, K., Yanakura, E., Mori, M., Mizuta, Hiroshi and Takahashi, S. (1988) High performance GaAs hetero-buffered MESFET's grown by 2 growth zone At 15th International Symposium on Gallium Arsenide and Related Compounds.

Record type: Conference or Workshop Item (Other)

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More information

Published date: September 1988
Additional Information: Event Dates: September 1988
Venue - Dates: 15th International Symposium on Gallium Arsenide and Related Compounds, 1988-09-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266446
URI: http://eprints.soton.ac.uk/id/eprint/266446
PURE UUID: 39a3e0b9-6b58-42fd-8f7b-fa70aa3a346d

Catalogue record

Date deposited: 30 Jul 2008 10:19
Last modified: 18 Jul 2017 07:16

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Contributors

Author: K. Hiruma
Author: E. Yanakura
Author: M. Mori
Author: Hiroshi Mizuta
Author: S. Takahashi

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