High performance GaAs hetero-buffered MESFET's grown by 2 growth zone


Hiruma, K., Yanakura, E., Mori, M., Mizuta, Hiroshi and Takahashi, S. (1988) High performance GaAs hetero-buffered MESFET's grown by 2 growth zone At 15th International Symposium on Gallium Arsenide and Related Compounds.

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Item Type: Conference or Workshop Item (Other)
Additional Information: Event Dates: September 1988
Venue - Dates: 15th International Symposium on Gallium Arsenide and Related Compounds, 1988-09-01
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 266446
Date :
Date Event
September 1988Published
Date Deposited: 30 Jul 2008 10:19
Last Modified: 17 Apr 2017 19:03
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/266446

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