GaAs MESFET's fabricated by new self-alignment technology
GaAs MESFET's fabricated by new self-alignment technology
pp 263-266
Yanokura, E.
e25f47e1-a65b-4218-b570-8344130ef2e3
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Mori, M.
cde93352-8d35-4627-9dff-52981bad5e0c
Takahashi, S.
9a65ca68-97d5-47d6-b8bc-a7f8f240997e
August 1987
Yanokura, E.
e25f47e1-a65b-4218-b570-8344130ef2e3
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Mori, M.
cde93352-8d35-4627-9dff-52981bad5e0c
Takahashi, S.
9a65ca68-97d5-47d6-b8bc-a7f8f240997e
Yanokura, E., Mizuta, Hiroshi, Mori, M. and Takahashi, S.
(1987)
GaAs MESFET's fabricated by new self-alignment technology.
19th Conference on Solid State Devices and Materials, Tokyo.
.
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Published date: August 1987
Additional Information:
Event Dates: August 1987
Venue - Dates:
19th Conference on Solid State Devices and Materials, Tokyo, 1987-07-31
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266448
URI: http://eprints.soton.ac.uk/id/eprint/266448
PURE UUID: b06930fe-2631-4644-b5da-ace547451205
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Date deposited: 30 Jul 2008 10:31
Last modified: 10 Dec 2021 22:17
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Contributors
Author:
E. Yanokura
Author:
Hiroshi Mizuta
Author:
M. Mori
Author:
S. Takahashi
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