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High performance GaAs hetero-buffered MESFET's grown by 2 growth zone

Hiruma, K., Yanakura, E., Mori, M., Mizuta, Hiroshi and Takahashi, S. (1989) High performance GaAs hetero-buffered MESFET's grown by 2 growth zone Institute of Physics Conference Series 96, J. Harris eds., pp. 487-490.

Record type: Article

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Published date: 1989
Organisations: Nanoelectronics and Nanotechnology

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Local EPrints ID: 266455
URI: http://eprints.soton.ac.uk/id/eprint/266455
PURE UUID: e3503bb5-77f7-4777-840b-5dc215cfd1aa

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Date deposited: 31 Jul 2008 08:14
Last modified: 18 Jul 2017 07:16

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Contributors

Author: K. Hiruma
Author: E. Yanakura
Author: M. Mori
Author: Hiroshi Mizuta
Author: S. Takahashi

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