High performance GaAs hetero-buffered MESFET's grown by 2 growth zone
High performance GaAs hetero-buffered MESFET's grown by 2 growth zone
487-490
Hiruma, K.
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Yanakura, E.
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Mori, M.
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Mizuta, Hiroshi
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Takahashi, S.
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1989
Hiruma, K.
d22958c5-8c54-4cfa-9b21-d1b920f8ae25
Yanakura, E.
7a49045f-4a46-4439-90a8-9d2e52165c8c
Mori, M.
cde93352-8d35-4627-9dff-52981bad5e0c
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Takahashi, S.
9a65ca68-97d5-47d6-b8bc-a7f8f240997e
Hiruma, K., Yanakura, E., Mori, M., Mizuta, Hiroshi and Takahashi, S.
(1989)
High performance GaAs hetero-buffered MESFET's grown by 2 growth zone.
Institute of Physics Conference Series 96, J. Harris eds., .
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Published date: 1989
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266455
URI: http://eprints.soton.ac.uk/id/eprint/266455
PURE UUID: e3503bb5-77f7-4777-840b-5dc215cfd1aa
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Date deposited: 31 Jul 2008 08:14
Last modified: 10 Dec 2021 22:17
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Contributors
Author:
K. Hiruma
Author:
E. Yanakura
Author:
M. Mori
Author:
Hiroshi Mizuta
Author:
S. Takahashi
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