Theoretical analysis of transconductance enhancement caused by electron-concentration- dependent screening in heavily doped systems
Theoretical analysis of transconductance enhancement caused by electron-concentration- dependent screening in heavily doped systems
155-160
Ho, S.
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Moriyoshi, A.
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Ohbu, I.
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Kagaya, O.
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Mizuta, Hiroshi
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Yamaguchi, K.
817d4eee-95a7-41c3-9d6e-18ca2eac715d
1994
Ho, S.
1fea5087-d1be-42e8-b5f7-c4c886f0d825
Moriyoshi, A.
6266b774-c4e4-45d7-abb6-6e1ae27b7a24
Ohbu, I.
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Kagaya, O.
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Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Yamaguchi, K.
817d4eee-95a7-41c3-9d6e-18ca2eac715d
Ho, S., Moriyoshi, A., Ohbu, I., Kagaya, O., Mizuta, Hiroshi and Yamaguchi, K.
(1994)
Theoretical analysis of transconductance enhancement caused by electron-concentration- dependent screening in heavily doped systems.
IEICE Trans. Electron, E77-C, .
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Published date: 1994
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266457
URI: http://eprints.soton.ac.uk/id/eprint/266457
PURE UUID: e5c56dd2-e138-4706-9b17-84f76fcfb563
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Date deposited: 31 Jul 2008 08:19
Last modified: 10 Dec 2021 22:17
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Contributors
Author:
S. Ho
Author:
A. Moriyoshi
Author:
I. Ohbu
Author:
O. Kagaya
Author:
Hiroshi Mizuta
Author:
K. Yamaguchi
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