Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates


Goodings, C. J., Mizuta, Hiroshi, Cleaver, J. R. A. and Ahmed, H. (1994) Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates Surface Science, 305, pp. 363-368.

Download

Full text not available from this repository.

Item Type: Article
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 266458
Date :
Date Event
1994Published
Date Deposited: 31 Jul 2008 08:22
Last Modified: 17 Apr 2017 19:03
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/266458

Actions (login required)

View Item View Item