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The impacts of surface conditions on the vapor-liquid-solid growth of germanium nanowires on Si (100) substrate

The impacts of surface conditions on the vapor-liquid-solid growth of germanium nanowires on Si (100) substrate
The impacts of surface conditions on the vapor-liquid-solid growth of germanium nanowires on Si (100) substrate
The impacts of surface conditions on the growth of Ge nanowires on a Si (100) substrate are discussed in detail. On SiO2-terminated Si substrates, high-density Ge nanowires can be easily grown. However, on H-terminated Si substrates, growing Ge nanowires is more complex. The silicon migration and the formation of a native SiO2 overlayer on a catalyst surface retard the growth of Ge nanowires. After removing this overlayer in the HF solution, high-density and well-ordered Ge nanowires are grown. Ge nanowires cross vertically and form two sets of parallel nanowires. It is found that nanowires grew along ?110? directions
0003-6951
41917
Li, C.B.
b2763fba-bafc-422d-ba57-22c62bffe86e
Usami, K.
f506146b-9864-482a-bc61-1de94522d32c
Muraki, T.
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Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Oda, S.
4a88f225-39f6-4c89-a9da-8c35fbfe6fde
Li, C.B.
b2763fba-bafc-422d-ba57-22c62bffe86e
Usami, K.
f506146b-9864-482a-bc61-1de94522d32c
Muraki, T.
a8d1d1a0-ba02-4fab-94c4-0efb577c7cef
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Oda, S.
4a88f225-39f6-4c89-a9da-8c35fbfe6fde

Li, C.B., Usami, K., Muraki, T., Mizuta, Hiroshi and Oda, S. (2008) The impacts of surface conditions on the vapor-liquid-solid growth of germanium nanowires on Si (100) substrate. Applied Physics Letters, 93 (4), 41917. (doi:10.1063/1.2968201).

Record type: Article

Abstract

The impacts of surface conditions on the growth of Ge nanowires on a Si (100) substrate are discussed in detail. On SiO2-terminated Si substrates, high-density Ge nanowires can be easily grown. However, on H-terminated Si substrates, growing Ge nanowires is more complex. The silicon migration and the formation of a native SiO2 overlayer on a catalyst surface retard the growth of Ge nanowires. After removing this overlayer in the HF solution, high-density and well-ordered Ge nanowires are grown. Ge nanowires cross vertically and form two sets of parallel nanowires. It is found that nanowires grew along ?110? directions

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Published date: 2008
Organisations: Nanoelectronics and Nanotechnology

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Local EPrints ID: 266508
URI: https://eprints.soton.ac.uk/id/eprint/266508
ISSN: 0003-6951
PURE UUID: 931478bb-2ffe-4af1-a892-635471df4814

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Date deposited: 04 Aug 2008 15:39
Last modified: 18 Nov 2019 20:48

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