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VLS growth of germanium nanowires on SiO2-terminanted Si (111) substrate

VLS growth of germanium nanowires on SiO2-terminanted Si (111) substrate
VLS growth of germanium nanowires on SiO2-terminanted Si (111) substrate
Li, C.B
797da189-7e92-4be5-a57b-26ceb4f3e3a2
Usami, K
9c9e150c-6d0f-4710-a534-2bfda5d012fa
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Uchida, K
94591838-45bd-426b-91da-f9d60a055c6c
Oda, S
514339b3-f8de-4750-8d20-c520834b2477
Li, C.B
797da189-7e92-4be5-a57b-26ceb4f3e3a2
Usami, K
9c9e150c-6d0f-4710-a534-2bfda5d012fa
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Uchida, K
94591838-45bd-426b-91da-f9d60a055c6c
Oda, S
514339b3-f8de-4750-8d20-c520834b2477

Li, C.B, Usami, K, Mizuta, Hiroshi, Uchida, K and Oda, S (2008) VLS growth of germanium nanowires on SiO2-terminanted Si (111) substrate. 40th International Conference on Solid State Devices and Materials (SSDM2008).

Record type: Conference or Workshop Item (Other)
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Published date: September 2008
Venue - Dates: 40th International Conference on Solid State Devices and Materials (SSDM2008), 2008-09-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266745
URI: http://eprints.soton.ac.uk/id/eprint/266745
PURE UUID: 50f5e53e-88b1-4523-a828-46b35f7a3b76

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Date deposited: 02 Oct 2008 18:26
Last modified: 14 Mar 2024 08:34

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Contributors

Author: C.B Li
Author: K Usami
Author: Hiroshi Mizuta
Author: K Uchida
Author: S Oda

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