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Impact of channel constrictions on the formation of multiple tunnel junctions in heavily-doped silicon single electron transistors

Impact of channel constrictions on the formation of multiple tunnel junctions in heavily-doped silicon single electron transistors
Impact of channel constrictions on the formation of multiple tunnel junctions in heavily-doped silicon single electron transistors
This paper reports the study of the uncontrolled multiple tunnel junctions (MTJs) induced by the random dopants in heavily doped silicon single electron transistors (SETs). The SETs are fabricated by making dual lateral constrictions in the narrow doped silicon channel formed on a silicon on insulator substrate. The doped SETs with relatively long constriction regions invariably exhibit the MTJ characteristics. The influence of the MTJs is suppressed by tuning the Fermi level in the constriction region. Finally, we show that the formation of uncontrolled MTJs can be avoided by making extremely sharp constrictions
0003-6951
112107
Manoharan, M.
5b5a3df4-7677-4c9b-bdca-c6b8f31e97e6
Oda, S.
4a88f225-39f6-4c89-a9da-8c35fbfe6fde
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Manoharan, M.
5b5a3df4-7677-4c9b-bdca-c6b8f31e97e6
Oda, S.
4a88f225-39f6-4c89-a9da-8c35fbfe6fde
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9

Manoharan, M., Oda, S. and Mizuta, Hiroshi (2008) Impact of channel constrictions on the formation of multiple tunnel junctions in heavily-doped silicon single electron transistors. Applied Physics Letters, 93 (11), 112107. (doi:10.1063/1.2980028).

Record type: Article

Abstract

This paper reports the study of the uncontrolled multiple tunnel junctions (MTJs) induced by the random dopants in heavily doped silicon single electron transistors (SETs). The SETs are fabricated by making dual lateral constrictions in the narrow doped silicon channel formed on a silicon on insulator substrate. The doped SETs with relatively long constriction regions invariably exhibit the MTJ characteristics. The influence of the MTJs is suppressed by tuning the Fermi level in the constriction region. Finally, we show that the formation of uncontrolled MTJs can be avoided by making extremely sharp constrictions

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Published date: 2008
Organisations: Nanoelectronics and Nanotechnology

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Local EPrints ID: 266747
URI: https://eprints.soton.ac.uk/id/eprint/266747
ISSN: 0003-6951
PURE UUID: 1cc6f0d7-77f2-4d1f-9d5a-2b8ac8d8294d

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Date deposited: 02 Oct 2008 18:32
Last modified: 14 Aug 2019 18:52

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