A study on Ge based spin-LED for spintronic applications.
A study on Ge based spin-LED for spintronic applications.
Spintronic applications require solid-state devices in which both spin injection and detection take place electrically. The lack of progress so far made towards this is due to the fact that the requirements for an electrical injection and extraction device are quite different from those for an optical detection device [1]. The strong recombination in the direct-bandgap of III-V semiconductors hampers the effort to create an all electrical device. Therefore it would be interesting to investigate group IV systems to create an electrical spin injection and detection device. In this work, concentration is given to Spin injection into Ge in a Spin-LED consisting of FM/Ge/GaAs/Quantum-Well. The effect of the conduction band offset between Ge and GaAs on the electron transport properties across the interface is investigated for various Ge doping densities. Simulation of a Ge/GaAs heterostructure was performed using ATLAS device simulation software. The calculated conduction band profiles for various doping densities of Ge and the corresponding I-V characteristics are shown in Fig 1a and 1b respectively. At forward bias, with increasing n-type doping densities more electrons go over the barrier increasing the thermionic emission. At reverse bias the current increases with increasing doping in Ge. This can be attributed to the effective lowering of the barrier height predicted by the Thermionic-emission model. Moreover as the barrier thickness is reduced due to reverse bias, electrons with lower energy than the barrier contributes to tunnelling currents. It can be inferred that highly doped Ge could be suitable for the proposed spintronic device.
Husain, M. K.
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Li, X
5e4a046d-1fb8-4dbd-a7e3-9e0fd520aa84
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
April 2007
Husain, M. K.
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Li, X
5e4a046d-1fb8-4dbd-a7e3-9e0fd520aa84
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Husain, M. K., Li, X and de Groot, C.H.
(2007)
A study on Ge based spin-LED for spintronic applications.
Condensed Matter and Materials Physics, University of Leicester, United Kingdom.
11 - 12 Apr 2007.
Record type:
Conference or Workshop Item
(Poster)
Abstract
Spintronic applications require solid-state devices in which both spin injection and detection take place electrically. The lack of progress so far made towards this is due to the fact that the requirements for an electrical injection and extraction device are quite different from those for an optical detection device [1]. The strong recombination in the direct-bandgap of III-V semiconductors hampers the effort to create an all electrical device. Therefore it would be interesting to investigate group IV systems to create an electrical spin injection and detection device. In this work, concentration is given to Spin injection into Ge in a Spin-LED consisting of FM/Ge/GaAs/Quantum-Well. The effect of the conduction band offset between Ge and GaAs on the electron transport properties across the interface is investigated for various Ge doping densities. Simulation of a Ge/GaAs heterostructure was performed using ATLAS device simulation software. The calculated conduction band profiles for various doping densities of Ge and the corresponding I-V characteristics are shown in Fig 1a and 1b respectively. At forward bias, with increasing n-type doping densities more electrons go over the barrier increasing the thermionic emission. At reverse bias the current increases with increasing doping in Ge. This can be attributed to the effective lowering of the barrier height predicted by the Thermionic-emission model. Moreover as the barrier thickness is reduced due to reverse bias, electrons with lower energy than the barrier contributes to tunnelling currents. It can be inferred that highly doped Ge could be suitable for the proposed spintronic device.
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Published date: April 2007
Additional Information:
Event Dates: 12-13 April 2007
Venue - Dates:
Condensed Matter and Materials Physics, University of Leicester, United Kingdom, 2007-04-11 - 2007-04-12
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266967
URI: http://eprints.soton.ac.uk/id/eprint/266967
PURE UUID: 5041d55f-c36a-44ef-b11c-e01279cbe1a2
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Date deposited: 05 Dec 2008 12:02
Last modified: 11 Dec 2021 03:43
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Contributors
Author:
M. K. Husain
Author:
X Li
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