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Numerically efficient modeling of CNT transistors with ballistic and non-ballistic effects for circuit simulation

Numerically efficient modeling of CNT transistors with ballistic and non-ballistic effects for circuit simulation
Numerically efficient modeling of CNT transistors with ballistic and non-ballistic effects for circuit simulation
This paper presents an efficient carbon nanotube (CNT) transistor modeling technique which is based on cubic spline approximation of the non-equilibrium mobile charge density. The approximation facilitates the solution of the selfconsistent voltage equation in a carbon nanotube so that calculation of the CNT drain-source current is accelerated by at least two orders of magnitude. A salient feature of the proposed technique is its ability to incorporate both ballistic and nonballistic transport effects without a significant computational cost. The proposed models have been extensively validated against reported CNT ballistic and non-ballistic transport theories and experimental results.
carbon nanotube transistors, numerical modeling, non-ballistic effects, circuit simulation
99-107
Kazmierski, Tom
a97d7958-40c3-413f-924d-84545216092a
Zhou, Dafeng
a55b344c-799c-4577-949c-f4f5ccaec9bf
Al-Hashimi, Bashir
0b29c671-a6d2-459c-af68-c4614dce3b5d
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Kazmierski, Tom
a97d7958-40c3-413f-924d-84545216092a
Zhou, Dafeng
a55b344c-799c-4577-949c-f4f5ccaec9bf
Al-Hashimi, Bashir
0b29c671-a6d2-459c-af68-c4614dce3b5d
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Kazmierski, Tom, Zhou, Dafeng, Al-Hashimi, Bashir and Ashburn, Peter (2010) Numerically efficient modeling of CNT transistors with ballistic and non-ballistic effects for circuit simulation. IEEE Transactions on Nanotechnology, 9 (1), 99-107. (doi:10.1109/TNANO.2009.2017019).

Record type: Article

Abstract

This paper presents an efficient carbon nanotube (CNT) transistor modeling technique which is based on cubic spline approximation of the non-equilibrium mobile charge density. The approximation facilitates the solution of the selfconsistent voltage equation in a carbon nanotube so that calculation of the CNT drain-source current is accelerated by at least two orders of magnitude. A salient feature of the proposed technique is its ability to incorporate both ballistic and nonballistic transport effects without a significant computational cost. The proposed models have been extensively validated against reported CNT ballistic and non-ballistic transport theories and experimental results.

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More information

Submitted date: 2 March 2009
e-pub ahead of print date: 10 March 2009
Published date: January 2010
Keywords: carbon nanotube transistors, numerical modeling, non-ballistic effects, circuit simulation
Organisations: Nanoelectronics and Nanotechnology, Electronic & Software Systems, EEE

Identifiers

Local EPrints ID: 267152
URI: https://eprints.soton.ac.uk/id/eprint/267152
PURE UUID: 13f9e10b-c9e4-4066-9975-2519a48be92c

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Date deposited: 02 Mar 2009 16:46
Last modified: 11 Nov 2019 21:06

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Contributors

Author: Tom Kazmierski
Author: Dafeng Zhou
Author: Bashir Al-Hashimi
Author: Peter Ashburn

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