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High-quality NiGe/Ge diodes for Schottky barrier MOSFETs

High-quality NiGe/Ge diodes for Schottky barrier MOSFETs
High-quality NiGe/Ge diodes for Schottky barrier MOSFETs
Schottky barrier (SB) Ge channel MOSFETs suffer from high drain-body leakage at the required elevated substrate doping concentrations to suppress source–drain leakage. Here, we show that electrodeposited Ni–Ge and NiGe/Ge Schottky diodes on highly doped Ge show low off current, which might make them suitable for SB-MOSFETs. The Schottky diodes showed rectification of up to five orders in magnitude. At low forward biases, the overlap of the forward current density curves for the as-deposited Ni/n-Ge and NiGe/n-Ge Schottky diodes indicates Fermi-level pinning in the Ge bandgap. The SB height for electrons remains virtually constant at ∼0.52 eV (indicating a hole barrier height of ∼0.14 eV) under various annealing temperatures. The series resistance decreases with increasing annealing temperature in agreement with four-point probe measurements indicating the lower specific resistance of NiGe as compared with Ni, which is crucial for high drive current in SB-MOSFETs. We show by numerical simulation that by incorporating such high-quality Schottky diodes in the source/drain of a Ge channel PMOS, highly doped substrate could be used to minimize the subthreshold source to drain leakage current.
305-309
Husain, Muhammad
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Li, Xiaoli
702314b0-2a65-4adb-9ef1-b8c62e8deb9f
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Husain, Muhammad
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Li, Xiaoli
702314b0-2a65-4adb-9ef1-b8c62e8deb9f
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c

Husain, Muhammad, Li, Xiaoli and de Groot, C.H. (2008) High-quality NiGe/Ge diodes for Schottky barrier MOSFETs. Materials Science in Semiconductor Processing, 11 (5-6), 305-309. (doi:10.1016/j.mssp.2008.11.007). (In Press)

Record type: Article

Abstract

Schottky barrier (SB) Ge channel MOSFETs suffer from high drain-body leakage at the required elevated substrate doping concentrations to suppress source–drain leakage. Here, we show that electrodeposited Ni–Ge and NiGe/Ge Schottky diodes on highly doped Ge show low off current, which might make them suitable for SB-MOSFETs. The Schottky diodes showed rectification of up to five orders in magnitude. At low forward biases, the overlap of the forward current density curves for the as-deposited Ni/n-Ge and NiGe/n-Ge Schottky diodes indicates Fermi-level pinning in the Ge bandgap. The SB height for electrons remains virtually constant at ∼0.52 eV (indicating a hole barrier height of ∼0.14 eV) under various annealing temperatures. The series resistance decreases with increasing annealing temperature in agreement with four-point probe measurements indicating the lower specific resistance of NiGe as compared with Ni, which is crucial for high drive current in SB-MOSFETs. We show by numerical simulation that by incorporating such high-quality Schottky diodes in the source/drain of a Ge channel PMOS, highly doped substrate could be used to minimize the subthreshold source to drain leakage current.

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Accepted/In Press date: 2008
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 267182
URI: http://eprints.soton.ac.uk/id/eprint/267182
PURE UUID: 0925bae5-f42e-478e-847a-81aa6dd2dd8a
ORCID for C.H. de Groot: ORCID iD orcid.org/0000-0002-3850-7101

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Date deposited: 11 Mar 2009 13:28
Last modified: 20 Jul 2019 01:05

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Contributors

Author: Muhammad Husain
Author: Xiaoli Li
Author: C.H. de Groot ORCID iD

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