Analytical Transient Response and Propagation Delay Model for Nanoscale CMOS Inverter
Analytical Transient Response and Propagation Delay Model for Nanoscale CMOS Inverter
This paper presents a new analytical propagation delay model for nanoscale CMOS inverters. By using a non-saturation current model, the analytical input-output transfer responses and propagation delay model are derived. The model is used for calculating inverter delays for different input transition times, load capacitances and supply voltages. Delays predicted by the proposed model are in good agreement with those of transistor level simulation results from SPICE, with accuracy of 3% or better.
Wang, Yangang
84511804-36d1-44c7-90d4-a18201735a08
Zwolinski, Mark
adfcb8e7-877f-4bd7-9b55-7553b6cb3ea0
May 2009
Wang, Yangang
84511804-36d1-44c7-90d4-a18201735a08
Zwolinski, Mark
adfcb8e7-877f-4bd7-9b55-7553b6cb3ea0
Wang, Yangang and Zwolinski, Mark
(2009)
Analytical Transient Response and Propagation Delay Model for Nanoscale CMOS Inverter.
ISCAS, Taipei., Taiwan.
Record type:
Conference or Workshop Item
(Poster)
Abstract
This paper presents a new analytical propagation delay model for nanoscale CMOS inverters. By using a non-saturation current model, the analytical input-output transfer responses and propagation delay model are derived. The model is used for calculating inverter delays for different input transition times, load capacitances and supply voltages. Delays predicted by the proposed model are in good agreement with those of transistor level simulation results from SPICE, with accuracy of 3% or better.
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Published date: May 2009
Venue - Dates:
ISCAS, Taipei., Taiwan, 2009-05-01
Organisations:
EEE
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Local EPrints ID: 267234
URI: http://eprints.soton.ac.uk/id/eprint/267234
PURE UUID: 076ef534-f8c8-4abf-ba9b-846800bb2798
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Date deposited: 31 Mar 2009 16:31
Last modified: 15 Mar 2024 02:39
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Contributors
Author:
Yangang Wang
Author:
Mark Zwolinski
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