Wang, Yangang, Zwolinski, Mark and Merrett, Michael (2008) Behavioural modelling for stability of CMOS SRAM cells subject to random discrete doping. IEEE Inernational Behavioral Modeling and Simulation Workshop (BMAS), San Jose, CA, United States.
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Published date: September 2008
Venue - Dates:
IEEE Inernational Behavioral Modeling and Simulation Workshop (BMAS), San Jose, CA, United States, 2008-08-31
Organisations:
EEE
Identifiers
Local EPrints ID: 267236
URI: http://eprints.soton.ac.uk/id/eprint/267236
PURE UUID: b5851188-7fb0-46c8-9e72-0b5733e08328
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Date deposited: 31 Mar 2009 16:41
Last modified: 09 Jan 2022 02:36
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Contributors
Author:
Yangang Wang
Author:
Mark Zwolinski
Author:
Michael Merrett
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