SiGeC HBTs: impact of carbon on performance
SiGeC HBTs: impact of carbon on performance
A UK consortium has recently reported advanced RF platform technology, which includes SiGe Heterojunction Bipolar Transistors (HBT) on Silicon-On-Insulator (SOI). The study in this paper is the continuation of consortium work, focused on fabricating SiGeC HBTs and on impact of C (up to 1.6%) on device performance. The devices with low C content (0.45%) exhibit excellent performance and gain up to 500. The results indicate that C content to be used in these devices should be less than 1%.
bipolar, SiGeC, diffusion, HBT, bipolar transistor
177-178
Mitrovic, I.Z.
a1d3f694-b084-42b4-ac61-25a540be3e64
El Mubarek, H.A.W.
08195505-5e00-40a6-bc9f-ebbf2a2fbf63
Buiu, O.
a994b22e-018b-4355-abd5-0227724f2a1a
Hall, S.
a11a8f8b-d6fb-47a7-82b1-1f76d2f170dc
Ashburn, P.
b83e6f67-41ee-449d-bfe2-554198713f23
Zhang, J.
722d2564-f8ae-40f1-b1e1-07896b67a0d8
2007
Mitrovic, I.Z.
a1d3f694-b084-42b4-ac61-25a540be3e64
El Mubarek, H.A.W.
08195505-5e00-40a6-bc9f-ebbf2a2fbf63
Buiu, O.
a994b22e-018b-4355-abd5-0227724f2a1a
Hall, S.
a11a8f8b-d6fb-47a7-82b1-1f76d2f170dc
Ashburn, P.
b83e6f67-41ee-449d-bfe2-554198713f23
Zhang, J.
722d2564-f8ae-40f1-b1e1-07896b67a0d8
Mitrovic, I.Z., El Mubarek, H.A.W., Buiu, O., Hall, S., Ashburn, P. and Zhang, J.
(2007)
SiGeC HBTs: impact of carbon on performance.
Nanoscaled Semiconductor on Insulator Structures and Devices, editors S.Hall, A.N.Nazarov, V.S.Lysenko.
.
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Conference or Workshop Item
(Other)
Abstract
A UK consortium has recently reported advanced RF platform technology, which includes SiGe Heterojunction Bipolar Transistors (HBT) on Silicon-On-Insulator (SOI). The study in this paper is the continuation of consortium work, focused on fabricating SiGeC HBTs and on impact of C (up to 1.6%) on device performance. The devices with low C content (0.45%) exhibit excellent performance and gain up to 500. The results indicate that C content to be used in these devices should be less than 1%.
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More information
Published date: 2007
Venue - Dates:
Nanoscaled Semiconductor on Insulator Structures and Devices, editors S.Hall, A.N.Nazarov, V.S.Lysenko, 2007-01-01
Keywords:
bipolar, SiGeC, diffusion, HBT, bipolar transistor
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 267364
URI: http://eprints.soton.ac.uk/id/eprint/267364
PURE UUID: 699f2565-5861-469c-973e-dfe929c816e6
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Date deposited: 14 May 2009 10:19
Last modified: 10 Dec 2021 22:30
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Contributors
Author:
I.Z. Mitrovic
Author:
H.A.W. El Mubarek
Author:
O. Buiu
Author:
S. Hall
Author:
P. Ashburn
Author:
J. Zhang
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