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SiGeC HBTs: impact of carbon on performance

Mitrovic, I.Z., El Mubarek, H.A.W., Buiu, O., Hall, S., Ashburn, P. and Zhang, J. (2007) SiGeC HBTs: impact of carbon on performance At Nanoscaled Semiconductor on Insulator Structures and Devices, editors S.Hall, A.N.Nazarov, V.S.Lysenko. , pp. 177-178.

Record type: Conference or Workshop Item (Other)


A UK consortium has recently reported advanced RF platform technology, which includes SiGe Heterojunction Bipolar Transistors (HBT) on Silicon-On-Insulator (SOI). The study in this paper is the continuation of consortium work, focused on fabricating SiGeC HBTs and on impact of C (up to 1.6%) on device performance. The devices with low C content (0.45%) exhibit excellent performance and gain up to 500. The results indicate that C content to be used in these devices should be less than 1%.

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Published date: 2007
Venue - Dates: Nanoscaled Semiconductor on Insulator Structures and Devices, editors S.Hall, A.N.Nazarov, V.S.Lysenko, 2007-01-01
Keywords: bipolar, SiGeC, diffusion, HBT, bipolar transistor
Organisations: Nanoelectronics and Nanotechnology


Local EPrints ID: 267364
PURE UUID: 699f2565-5861-469c-973e-dfe929c816e6

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Date deposited: 14 May 2009 10:19
Last modified: 18 Jul 2017 07:05

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Author: I.Z. Mitrovic
Author: H.A.W. El Mubarek
Author: O. Buiu
Author: S. Hall
Author: P. Ashburn
Author: J. Zhang

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