Mitrovic, I.Z., El Mubarek, H.A.W., Buiu, O., Hall, S., Ashburn, P. and Zhang, J.
SiGeC HBTs: impact of carbon on performance
At Nanoscaled Semiconductor on Insulator Structures and Devices, editors S.Hall, A.N.Nazarov, V.S.Lysenko.
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A UK consortium has recently reported advanced RF platform technology, which includes SiGe Heterojunction Bipolar Transistors (HBT) on Silicon-On-Insulator (SOI). The study in this paper is the continuation of consortium work, focused on fabricating SiGeC HBTs and on impact of C (up to 1.6%) on device performance. The devices with low C content (0.45%) exhibit excellent performance and gain up to 500. The results indicate that C content to be used in these devices should be less than 1%.
Conference or Workshop Item
|Venue - Dates:
||Nanoscaled Semiconductor on Insulator Structures and Devices, editors S.Hall, A.N.Nazarov, V.S.Lysenko, 2007-01-01
||bipolar, SiGeC, diffusion, HBT, bipolar transistor
||Nanoelectronics and Nanotechnology
||14 May 2009 10:19
||17 Apr 2017 18:49
|Further Information:||Google Scholar|
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