Fluorine enriched SOI (FSOI): a novel solution for future ultra-shallow junction devices
Fluorine enriched SOI (FSOI): a novel solution for future ultra-shallow junction devices
This paper presents the novel concept of fluorine enriched silicon on insulator (FSOI) for boron diffusion suppression in ultra shallow junction SOI devices. A high energy fluorine implant is made into SOI wafers to create vacancy-fluorine clusters in the active Si layer. Interstitial dislocation loops are also created around the range of the fluorine implant and the implantation energy is chosen so that the clusters are separated from the loops by the buried oxide layer. Fluorine implantation energies of 185 and 400keV are studied and SIMS is used to characterize the boron and fluorine profiles. It is shown that a suppression of boron diffusion is obtained for both fluorine implant energies but the boron diffusion suppression is significantly larger for the 185keV implant.
SOI, fluorine, boron, diffusion, vacancies, ultra-shallow junctions
El Mubarek, H.A.W.
08195505-5e00-40a6-bc9f-ebbf2a2fbf63
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
2007
El Mubarek, H.A.W.
08195505-5e00-40a6-bc9f-ebbf2a2fbf63
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
El Mubarek, H.A.W. and Ashburn, P.
(2007)
Fluorine enriched SOI (FSOI): a novel solution for future ultra-shallow junction devices.
Materials Research Society Conference, San Francisco, United States.
08 - 12 May 2007.
Record type:
Conference or Workshop Item
(Other)
Abstract
This paper presents the novel concept of fluorine enriched silicon on insulator (FSOI) for boron diffusion suppression in ultra shallow junction SOI devices. A high energy fluorine implant is made into SOI wafers to create vacancy-fluorine clusters in the active Si layer. Interstitial dislocation loops are also created around the range of the fluorine implant and the implantation energy is chosen so that the clusters are separated from the loops by the buried oxide layer. Fluorine implantation energies of 185 and 400keV are studied and SIMS is used to characterize the boron and fluorine profiles. It is shown that a suppression of boron diffusion is obtained for both fluorine implant energies but the boron diffusion suppression is significantly larger for the 185keV implant.
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Published date: 2007
Additional Information:
Event Dates: 9th -13th May
Venue - Dates:
Materials Research Society Conference, San Francisco, United States, 2007-05-08 - 2007-05-12
Keywords:
SOI, fluorine, boron, diffusion, vacancies, ultra-shallow junctions
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 267366
URI: http://eprints.soton.ac.uk/id/eprint/267366
PURE UUID: d5a0473a-990a-4ca0-94f3-cb395b8b77bb
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Date deposited: 14 May 2009 10:41
Last modified: 10 Dec 2021 22:30
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Author:
H.A.W. El Mubarek
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