Study of single-electron transport via suspended double silicon quantum dots
Study of single-electron transport via suspended double silicon quantum dots
Ogi, J
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Ferrus, T
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Tsuchiya, Yoshishige
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Uchida, K
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Williams, D
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Oda, S
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Mizuta, Hiroshi
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13 June 2009
Ogi, J
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Ferrus, T
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Tsuchiya, Yoshishige
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Uchida, K
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Williams, D
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Oda, S
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Mizuta, Hiroshi
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Ogi, J, Ferrus, T, Tsuchiya, Yoshishige, Uchida, K, Williams, D, Oda, S and Mizuta, Hiroshi
(2009)
Study of single-electron transport via suspended double silicon quantum dots.
IEEE Silicon Nanoelectronics Workshop 2009, Kyoto.
13 - 14 Jun 2009.
Record type:
Conference or Workshop Item
(Other)
Text
Ogi_SNW09.pdf
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More information
Published date: 13 June 2009
Additional Information:
Event Dates: 13-14 June 2009
Venue - Dates:
IEEE Silicon Nanoelectronics Workshop 2009, Kyoto, 2009-06-13 - 2009-06-14
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 267368
URI: http://eprints.soton.ac.uk/id/eprint/267368
PURE UUID: 60d119de-2b9b-464d-b29e-33cefc0cf74e
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Date deposited: 14 May 2009 16:09
Last modified: 14 Mar 2024 08:49
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Contributors
Author:
J Ogi
Author:
T Ferrus
Author:
Yoshishige Tsuchiya
Author:
K Uchida
Author:
D Williams
Author:
S Oda
Author:
Hiroshi Mizuta
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