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Study of single-electron transport via suspended double silicon quantum dots

Study of single-electron transport via suspended double silicon quantum dots
Study of single-electron transport via suspended double silicon quantum dots
Ogi, J
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Ferrus, T
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Tsuchiya, Yoshishige
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Uchida, K
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Williams, D
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Oda, S
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Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Ogi, J
2cdf3c25-f716-4791-9451-30ef93a4857a
Ferrus, T
1b3b420c-47c2-4d9d-b439-60ea3f6ac5ff
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Uchida, K
94591838-45bd-426b-91da-f9d60a055c6c
Williams, D
08e26dc1-a8a8-4e3e-8fe3-d21b73ffeae9
Oda, S
514339b3-f8de-4750-8d20-c520834b2477
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9

Ogi, J, Ferrus, T, Tsuchiya, Yoshishige, Uchida, K, Williams, D, Oda, S and Mizuta, Hiroshi (2009) Study of single-electron transport via suspended double silicon quantum dots. IEEE Silicon Nanoelectronics Workshop 2009. 13 - 14 Jun 2009.

Record type: Conference or Workshop Item (Other)
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More information

Published date: 13 June 2009
Additional Information: Event Dates: 13-14 June 2009
Venue - Dates: IEEE Silicon Nanoelectronics Workshop 2009, 2009-06-13 - 2009-06-14
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 267368
URI: https://eprints.soton.ac.uk/id/eprint/267368
PURE UUID: 60d119de-2b9b-464d-b29e-33cefc0cf74e

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Date deposited: 14 May 2009 16:09
Last modified: 18 Jul 2017 07:05

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