Inhomogeneous Ni/Ge Schottky barriers due to variation in Fermi-level pinning
Inhomogeneous Ni/Ge Schottky barriers due to variation in Fermi-level pinning
To achieve high performance Ge nMOSFETs it is necessary to reduce the metal/semiconductor Schottky barrier heights at the source and drain. Ni/Ge and NiGe/Ge Schottky barriers are fabricated by electrodeposition using n-type Ge substrates. Current (I)–voltage (V) and capacitance (C)–voltage (V) and low temperature I–V measurements are presented. A high-quality Schottky barrier with extremely low reverse leakage current is revealed. The results are shown to fit an inhomogeneous barrier model for thermionic emission over a Schottky barrier. A mean value of 0.57 eV and a standard deviation of 52 meV is obtained for the Schottky barrier height at room temperature. A likely explanation for the distribution of the Schottky barrier height is the spatial variation of the metal induced gap states at the Ge surface due to a variation in interfacial oxide thickness, which de-pins the Fermi level.
1599-1602
Li, Xiaoli
702314b0-2a65-4adb-9ef1-b8c62e8deb9f
Husain, Muhammad
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Kiziroglou, Michail
c65db659-ec9b-4854-b3b5-b45b38556ca7
de Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
June 2009
Li, Xiaoli
702314b0-2a65-4adb-9ef1-b8c62e8deb9f
Husain, Muhammad
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Kiziroglou, Michail
c65db659-ec9b-4854-b3b5-b45b38556ca7
de Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Li, Xiaoli, Husain, Muhammad, Kiziroglou, Michail and de Groot, Kees
(2009)
Inhomogeneous Ni/Ge Schottky barriers due to variation in Fermi-level pinning.
Microelectronic Engineering, 86 (7-9), .
Abstract
To achieve high performance Ge nMOSFETs it is necessary to reduce the metal/semiconductor Schottky barrier heights at the source and drain. Ni/Ge and NiGe/Ge Schottky barriers are fabricated by electrodeposition using n-type Ge substrates. Current (I)–voltage (V) and capacitance (C)–voltage (V) and low temperature I–V measurements are presented. A high-quality Schottky barrier with extremely low reverse leakage current is revealed. The results are shown to fit an inhomogeneous barrier model for thermionic emission over a Schottky barrier. A mean value of 0.57 eV and a standard deviation of 52 meV is obtained for the Schottky barrier height at room temperature. A likely explanation for the distribution of the Schottky barrier height is the spatial variation of the metal induced gap states at the Ge surface due to a variation in interfacial oxide thickness, which de-pins the Fermi level.
More information
Published date: June 2009
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 267416
URI: http://eprints.soton.ac.uk/id/eprint/267416
ISSN: 0167-9317
PURE UUID: efd7bfde-f575-482c-8370-0f65bcd1612e
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Date deposited: 29 May 2009 06:35
Last modified: 15 Mar 2024 03:11
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Contributors
Author:
Xiaoli Li
Author:
Muhammad Husain
Author:
Michail Kiziroglou
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