High-Speed and Non-Volatile Nano Electro-Mechanical Memory Incorporating Si Quantum Dots
High-Speed and Non-Volatile Nano Electro-Mechanical Memory Incorporating Si Quantum Dots
Basic device characteristics were investigated for a new high-speed and non-volatile nano electro-mechanical systems (NEMS) memory device with nanocrystalline silicon (nc-Si) dots embedded in its movable floating gate beam.
Over 1 GHz operation is possible due to the size reduction of the NEMS. From a simulation of mechanical properties of the movable floating gate beam, advantage of using the nc-Si dots array was shown for low power operation. The mechanical bistability of the fabricated SiO2 beam was clearly observed in both experimental and simulation studies.
1589-1590
American Institute of Physics
Tsuchiya, Yoshishige
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Takai, K
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Momo, N
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Nagami, T
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Yamaguchi, S
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Shimada, T
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Mizuta, Hiroshi
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Oda, S
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2005
Tsuchiya, Yoshishige
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Takai, K
b3963d7d-8480-435c-bdb7-65b05f9d3059
Momo, N
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Nagami, T
b4469bb6-e8d9-4030-bc0c-e7ed38d178c4
Yamaguchi, S
d2b952ed-52cb-451d-9e36-82fb43dc6aeb
Shimada, T
decc1b48-4d6c-4a6d-b2a2-21e5111bb2bb
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Oda, S
514339b3-f8de-4750-8d20-c520834b2477
Tsuchiya, Yoshishige, Takai, K, Momo, N, Nagami, T, Yamaguchi, S, Shimada, T, Mizuta, Hiroshi and Oda, S
(2005)
High-Speed and Non-Volatile Nano Electro-Mechanical Memory Incorporating Si Quantum Dots.
In Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors, ed. J. Menendez and C. G. Van de Walle,.
American Institute of Physics.
.
Record type:
Conference or Workshop Item
(Paper)
Abstract
Basic device characteristics were investigated for a new high-speed and non-volatile nano electro-mechanical systems (NEMS) memory device with nanocrystalline silicon (nc-Si) dots embedded in its movable floating gate beam.
Over 1 GHz operation is possible due to the size reduction of the NEMS. From a simulation of mechanical properties of the movable floating gate beam, advantage of using the nc-Si dots array was shown for low power operation. The mechanical bistability of the fabricated SiO2 beam was clearly observed in both experimental and simulation studies.
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Published date: 2005
Venue - Dates:
27th International Conference on the Physics of Semiconductors (ICPS 27), , Flagstaff, AZ, United States, 2004-07-25 - 2004-07-30
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 267420
URI: http://eprints.soton.ac.uk/id/eprint/267420
PURE UUID: f7af9d66-c8b1-4de4-9639-2fda789f18b5
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Date deposited: 29 May 2009 15:56
Last modified: 14 Mar 2024 08:49
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Contributors
Author:
Yoshishige Tsuchiya
Author:
K Takai
Author:
N Momo
Author:
T Nagami
Author:
S Yamaguchi
Author:
T Shimada
Author:
Hiroshi Mizuta
Author:
S Oda
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