High-Speed and Non-Volatile Nano Electro-Mechanical Memory Incorporating Si Quantum Dots

Tsuchiya, Yoshishige, Takai, K, Momo, N, Nagami, T, Yamaguchi, S, Shimada, T, Mizuta, Hiroshi and Oda, S (2005) High-Speed and Non-Volatile Nano Electro-Mechanical Memory Incorporating Si Quantum Dots. In Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors, ed. J. Menendez and C. G. Van de Walle,. American Institute of Physics. pp. 1589-1590 .

Record type: Conference or Workshop Item (Paper)

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Published date: 2005

Venue - Dates: Conference, 2005-01-01 - 2005-01-01

Organisations: Nanoelectronics and Nanotechnology

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Local EPrints ID: 267420

URI: https://eprints.soton.ac.uk/id/eprint/267420

PURE UUID: f7af9d66-c8b1-4de4-9639-2fda789f18b5

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Date deposited: 29 May 2009 15:56

Last modified: 17 Jul 2019 22:08

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Contributors

Author: Yoshishige Tsuchiya

Author: K Takai

Author: N Momo

Author: T Nagami

Author: S Yamaguchi

Author: T Shimada

Author: Hiroshi Mizuta

Author: S Oda

University divisions

Faculties (pre 2018 reorg) > Faculty of Physical Sciences and Engineering (pre 2018 reorg) > Electronics & Computer Science (pre 2018 reorg) > Nanoelectronics and Nanotechnology (pre 2018 reorg)
Current Faculties > Faculty of Engineering and Physical Sciences > School of Electronics and Computer Science > Electronics & Computer Science (pre 2018 reorg) > Nanoelectronics and Nanotechnology (pre 2018 reorg)
School of Electronics and Computer Science > Electronics & Computer Science (pre 2018 reorg) > Nanoelectronics and Nanotechnology (pre 2018 reorg)

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