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High-Speed and Non-Volatile Nano Electro-Mechanical Memory Incorporating Si Quantum Dots

High-Speed and Non-Volatile Nano Electro-Mechanical Memory Incorporating Si Quantum Dots
High-Speed and Non-Volatile Nano Electro-Mechanical Memory Incorporating Si Quantum Dots
1589-1590
American Institute of Physics
Tsuchiya, Yoshishige
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Takai, K
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Momo, N
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Nagami, T
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Yamaguchi, S
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Shimada, T
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Mizuta, Hiroshi
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Oda, S
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Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Takai, K
b3963d7d-8480-435c-bdb7-65b05f9d3059
Momo, N
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Nagami, T
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Yamaguchi, S
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Shimada, T
decc1b48-4d6c-4a6d-b2a2-21e5111bb2bb
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Oda, S
514339b3-f8de-4750-8d20-c520834b2477

Tsuchiya, Yoshishige, Takai, K, Momo, N, Nagami, T, Yamaguchi, S, Shimada, T, Mizuta, Hiroshi and Oda, S (2005) High-Speed and Non-Volatile Nano Electro-Mechanical Memory Incorporating Si Quantum Dots. In Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors, ed. J. Menendez and C. G. Van de Walle,. American Institute of Physics. pp. 1589-1590 .

Record type: Conference or Workshop Item (Paper)
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Published date: 2005
Venue - Dates: Conference, 2005-01-01 - 2005-01-01
Organisations: Nanoelectronics and Nanotechnology

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Local EPrints ID: 267420
URI: https://eprints.soton.ac.uk/id/eprint/267420
PURE UUID: f7af9d66-c8b1-4de4-9639-2fda789f18b5

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Date deposited: 29 May 2009 15:56
Last modified: 30 Sep 2019 19:12

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