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Pulsed-Source MOCVD of High-k Dielectric Thin Films with in situ Monitoring by Spectroscopic Ellipsometry

Pulsed-Source MOCVD of High-k Dielectric Thin Films with in situ Monitoring by Spectroscopic Ellipsometry
Pulsed-Source MOCVD of High-k Dielectric Thin Films with in situ Monitoring by Spectroscopic Ellipsometry
0021-4922
1957-1961
Tsuchiya, Yoshishige
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Endoh, M
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Kurosawa, M
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Tung, R. T
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Hattori, T
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Oda, S
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Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Endoh, M
9c2a7372-1652-4de6-81e8-afd3f1f20c97
Kurosawa, M
c8156ab2-c304-42f9-b4ab-37d113150ea6
Tung, R. T
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Hattori, T
936980ff-7c74-4ce6-9f2d-e242c4c4baac
Oda, S
514339b3-f8de-4750-8d20-c520834b2477

Tsuchiya, Yoshishige, Endoh, M, Kurosawa, M, Tung, R. T, Hattori, T and Oda, S (2003) Pulsed-Source MOCVD of High-k Dielectric Thin Films with in situ Monitoring by Spectroscopic Ellipsometry. Japanese Journal of Applied Physics, 42, 1957-1961.

Record type: Article
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More information

Published date: April 2003
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 267431
URI: http://eprints.soton.ac.uk/id/eprint/267431
ISSN: 0021-4922
PURE UUID: d1ce7124-bef9-4931-8f0b-32b3747c2e59

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Date deposited: 01 Jun 2009 09:11
Last modified: 14 Mar 2024 08:50

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Contributors

Author: Yoshishige Tsuchiya
Author: M Endoh
Author: M Kurosawa
Author: R. T Tung
Author: T Hattori
Author: S Oda

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