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Atomic layer-by-layer MOCVD of high-k dielectric thin films with in-situ monitoring by spectroscopic ellipsometry

Atomic layer-by-layer MOCVD of high-k dielectric thin films with in-situ monitoring by spectroscopic ellipsometry
Atomic layer-by-layer MOCVD of high-k dielectric thin films with in-situ monitoring by spectroscopic ellipsometry
Tsuchiya, Yoshishige
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Endoh, M
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Kurosawa, M
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Tung, R. T
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Hattori, T
936980ff-7c74-4ce6-9f2d-e242c4c4baac
Oda, S
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Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Endoh, M
9c2a7372-1652-4de6-81e8-afd3f1f20c97
Kurosawa, M
c8156ab2-c304-42f9-b4ab-37d113150ea6
Tung, R. T
9a1fd5e3-837d-4d72-9d4d-18b918d42900
Hattori, T
936980ff-7c74-4ce6-9f2d-e242c4c4baac
Oda, S
514339b3-f8de-4750-8d20-c520834b2477

Tsuchiya, Yoshishige, Endoh, M, Kurosawa, M, Tung, R. T, Hattori, T and Oda, S (2002) Atomic layer-by-layer MOCVD of high-k dielectric thin films with in-situ monitoring by spectroscopic ellipsometry. 2002 International Conference on Solid State Devices and Materials (SSDM2002), Nagoya, Tokyo. 16 - 18 Sep 2002.

Record type: Conference or Workshop Item (Poster)

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More information

Published date: 2002
Additional Information: Event Dates: 17-19 September
Venue - Dates: 2002 International Conference on Solid State Devices and Materials (SSDM2002), Nagoya, Tokyo, 2002-09-16 - 2002-09-18
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 267446
URI: http://eprints.soton.ac.uk/id/eprint/267446
PURE UUID: 5610b6fe-2c09-495f-92ae-c84b8847b6d4

Catalogue record

Date deposited: 01 Jun 2009 15:17
Last modified: 08 Nov 2021 21:38

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Contributors

Author: Yoshishige Tsuchiya
Author: M Endoh
Author: M Kurosawa
Author: R. T Tung
Author: T Hattori
Author: S Oda

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