Tsuchiya, Yoshishige, Furukawa, R, Suto, T, Nohira, H, Maruizumi, T, Shiraki, Y, Mizuta, Hiroshi and Oda, S (2006) Effect of Post-Deposition Annealing on the Electrical Properties of MOCVD-grown Praseodymium Silicate MIS Diode. 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices – Science and Technology (IWDTF2006), Kawasaki, Japan. 08 - 10 Nov 2006.
Record type:
Conference or Workshop Item
(Poster)
More information
Published date: 2006
Additional Information:
Event Dates: 8-10 November
Venue - Dates:
2006 International Workshop on Dielectric Thin Films for Future ULSI Devices – Science and Technology (IWDTF2006), Kawasaki, Japan, 2006-11-08 - 2006-11-10
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 267447
URI: http://eprints.soton.ac.uk/id/eprint/267447
PURE UUID: af02e041-1476-4346-b3de-efa7b3e0d38e
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Date deposited: 01 Jun 2009 15:27
Last modified: 14 Mar 2024 08:50
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Contributors
Author:
Yoshishige Tsuchiya
Author:
R Furukawa
Author:
T Suto
Author:
H Nohira
Author:
T Maruizumi
Author:
Y Shiraki
Author:
Hiroshi Mizuta
Author:
S Oda
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