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Effect of Post-Deposition Annealing on the Electrical Properties of MOCVD-grown Praseodymium Silicate MIS Diode

Effect of Post-Deposition Annealing on the Electrical Properties of MOCVD-grown Praseodymium Silicate MIS Diode
Effect of Post-Deposition Annealing on the Electrical Properties of MOCVD-grown Praseodymium Silicate MIS Diode
Tsuchiya, Yoshishige
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Furukawa, R
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Suto, T
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Nohira, H
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Maruizumi, T
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Shiraki, Y
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Mizuta, Hiroshi
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Oda, S
514339b3-f8de-4750-8d20-c520834b2477
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Furukawa, R
825f0d13-023a-4356-ac45-63945754addd
Suto, T
5269a7e0-8d90-4b2c-9c99-5ee1cc66a921
Nohira, H
6153ef31-aace-452f-a86e-68f637905e78
Maruizumi, T
cac9ab6e-ca3a-4c1c-9d41-ebc7e7e1093b
Shiraki, Y
539855a9-e3c0-4134-9615-5ea0f079a4fa
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Oda, S
514339b3-f8de-4750-8d20-c520834b2477

Tsuchiya, Yoshishige, Furukawa, R, Suto, T, Nohira, H, Maruizumi, T, Shiraki, Y, Mizuta, Hiroshi and Oda, S (2006) Effect of Post-Deposition Annealing on the Electrical Properties of MOCVD-grown Praseodymium Silicate MIS Diode. 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices – Science and Technology (IWDTF2006), Kawasaki, Japan. 08 - 10 Nov 2006.

Record type: Conference or Workshop Item (Poster)
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More information

Published date: 2006
Additional Information: Event Dates: 8-10 November
Venue - Dates: 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices – Science and Technology (IWDTF2006), Kawasaki, Japan, 2006-11-08 - 2006-11-10
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 267447
URI: http://eprints.soton.ac.uk/id/eprint/267447
PURE UUID: af02e041-1476-4346-b3de-efa7b3e0d38e

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Date deposited: 01 Jun 2009 15:27
Last modified: 14 Mar 2024 08:50

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Contributors

Author: Yoshishige Tsuchiya
Author: R Furukawa
Author: T Suto
Author: H Nohira
Author: T Maruizumi
Author: Y Shiraki
Author: Hiroshi Mizuta
Author: S Oda

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