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Co integration of Silicon Nanodevices and NEMS for Advanced Information Processing

Co integration of Silicon Nanodevices and NEMS for Advanced Information Processing
Co integration of Silicon Nanodevices and NEMS for Advanced Information Processing
In this paper we present our recent attempts at developing the advanced information processing devices by integrating nano-electro-mechanical (NEM)structures into conventional silicon nanodevices. Firstly, we show high-speed and nonvolatile NEM memory which features a mechanically-bistable floating gate is integrated onto MOSFETs. Secondly we discuss hybrid systems of single-electron transistors and NEM structures for exploring new switching principles.
Mizuta, Hiroshi
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Nagami, Tasuku
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Ogi, Jun
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Pruvost, Benjamin
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Garcia Ramirez, Mario
6110a5eb-c5bc-4b1c-9cc3-6569e5ae3259
Yoshimura, Hideo
5db72fe7-21e1-49b5-96ba-6865aec30844
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Oda, Shunri
680a9899-52bb-4adc-8594-14bb92236fec
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Nagami, Tasuku
6c131cc0-9cfd-43ce-b48c-59850dcc442d
Ogi, Jun
4e46ba9f-92b9-438c-8b3e-11f9e00f7d3e
Pruvost, Benjamin
c261b14b-523d-4fa4-8822-956be90da2fb
Garcia Ramirez, Mario
6110a5eb-c5bc-4b1c-9cc3-6569e5ae3259
Yoshimura, Hideo
5db72fe7-21e1-49b5-96ba-6865aec30844
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Oda, Shunri
680a9899-52bb-4adc-8594-14bb92236fec

Mizuta, Hiroshi, Nagami, Tasuku, Ogi, Jun, Pruvost, Benjamin, Garcia Ramirez, Mario, Yoshimura, Hideo, Tsuchiya, Yoshishige and Oda, Shunri (2008) Co integration of Silicon Nanodevices and NEMS for Advanced Information Processing. 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2008).

Record type: Conference or Workshop Item (Other)

Abstract

In this paper we present our recent attempts at developing the advanced information processing devices by integrating nano-electro-mechanical (NEM)structures into conventional silicon nanodevices. Firstly, we show high-speed and nonvolatile NEM memory which features a mechanically-bistable floating gate is integrated onto MOSFETs. Secondly we discuss hybrid systems of single-electron transistors and NEM structures for exploring new switching principles.

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More information

Published date: 2008
Venue - Dates: 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2008), 2008-01-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 267459
URI: https://eprints.soton.ac.uk/id/eprint/267459
PURE UUID: c946ad36-954c-4cac-8cf0-886dbf97d762

Catalogue record

Date deposited: 04 Jun 2009 08:52
Last modified: 18 Jul 2017 07:04

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Contributors

Author: Hiroshi Mizuta
Author: Tasuku Nagami
Author: Jun Ogi
Author: Benjamin Pruvost
Author: Mario Garcia Ramirez
Author: Hideo Yoshimura
Author: Yoshishige Tsuchiya
Author: Shunri Oda

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