Co integration of Silicon Nanodevices and NEMS for Advanced Information Processing
Co integration of Silicon Nanodevices and NEMS for Advanced Information Processing
In this paper we present our recent attempts at developing the advanced information processing devices by integrating nano-electro-mechanical (NEM)structures into conventional silicon nanodevices. Firstly, we show high-speed and nonvolatile NEM memory which features a mechanically-bistable floating gate is integrated onto MOSFETs. Secondly we discuss hybrid systems of single-electron transistors and NEM structures for exploring new switching principles.
Mizuta, Hiroshi
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Nagami, Tasuku
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Ogi, Jun
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Pruvost, Benjamin
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Garcia Ramirez, Mario
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Yoshimura, Hideo
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Tsuchiya, Yoshishige
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Oda, Shunri
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2008
Mizuta, Hiroshi
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Nagami, Tasuku
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Ogi, Jun
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Pruvost, Benjamin
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Garcia Ramirez, Mario
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Yoshimura, Hideo
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Tsuchiya, Yoshishige
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Oda, Shunri
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Mizuta, Hiroshi, Nagami, Tasuku, Ogi, Jun, Pruvost, Benjamin, Garcia Ramirez, Mario, Yoshimura, Hideo, Tsuchiya, Yoshishige and Oda, Shunri
(2008)
Co integration of Silicon Nanodevices and NEMS for Advanced Information Processing.
9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2008), Beijing.
Record type:
Conference or Workshop Item
(Other)
Abstract
In this paper we present our recent attempts at developing the advanced information processing devices by integrating nano-electro-mechanical (NEM)structures into conventional silicon nanodevices. Firstly, we show high-speed and nonvolatile NEM memory which features a mechanically-bistable floating gate is integrated onto MOSFETs. Secondly we discuss hybrid systems of single-electron transistors and NEM structures for exploring new switching principles.
Text
Co-integration_of_Silicon_Nanodevices_and_NEMS_for_Advanced_Information_Processing.pdf
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Published date: 2008
Venue - Dates:
9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2008), Beijing, 2008-01-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 267459
URI: http://eprints.soton.ac.uk/id/eprint/267459
PURE UUID: c946ad36-954c-4cac-8cf0-886dbf97d762
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Date deposited: 04 Jun 2009 08:52
Last modified: 08 Jan 2022 00:02
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Contributors
Author:
Hiroshi Mizuta
Author:
Tasuku Nagami
Author:
Jun Ogi
Author:
Benjamin Pruvost
Author:
Mario Garcia Ramirez
Author:
Hideo Yoshimura
Author:
Yoshishige Tsuchiya
Author:
Shunri Oda
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