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Si/SiGe near-infrared photodetectors grown using low pressure chemical vapour deposition

Si/SiGe near-infrared photodetectors grown using low pressure chemical vapour deposition
Si/SiGe near-infrared photodetectors grown using low pressure chemical vapour deposition
Near-infrared photodetectors have been fabricated using standard CMOS processes in conjunction with the multilayer growth of Si/SiGe0.06 using low-pressure chemical vapor deposition (LPCVD). Cross-section scanning electron microscopy (SEM) indicates the existence of quantum dot like corrugations in devices with particularly thick SiGe0.06 quantum wells. With an accumulation of germanium atoms at the crest of such features and commensurate high germanium concentration we see a considerable enhancement of the long wavelength detection sensitivity of photodetectors in the range 1100–1300 nm. By fitting experimental data the minimum energy gap of the structure is found to be 0.88 eV corresponding to a germanium concentration of around 15%.
179-182
Iamraksa, P.
72bdc7d2-f4ab-418d-a6af-911cc061d237
Lloyd, N.S.
0c5edf73-bc40-43ed-9737-ebf3b5863c49
Bagnall, D.M.
5d84abc8-77e5-43f7-97cb-e28533f25ef1
Iamraksa, P.
72bdc7d2-f4ab-418d-a6af-911cc061d237
Lloyd, N.S.
0c5edf73-bc40-43ed-9737-ebf3b5863c49
Bagnall, D.M.
5d84abc8-77e5-43f7-97cb-e28533f25ef1

Iamraksa, P., Lloyd, N.S. and Bagnall, D.M. (2008) Si/SiGe near-infrared photodetectors grown using low pressure chemical vapour deposition. Journal of Materials Science: Materials in Electronics, 19, 179-182.

Record type: Article

Abstract

Near-infrared photodetectors have been fabricated using standard CMOS processes in conjunction with the multilayer growth of Si/SiGe0.06 using low-pressure chemical vapor deposition (LPCVD). Cross-section scanning electron microscopy (SEM) indicates the existence of quantum dot like corrugations in devices with particularly thick SiGe0.06 quantum wells. With an accumulation of germanium atoms at the crest of such features and commensurate high germanium concentration we see a considerable enhancement of the long wavelength detection sensitivity of photodetectors in the range 1100–1300 nm. By fitting experimental data the minimum energy gap of the structure is found to be 0.88 eV corresponding to a germanium concentration of around 15%.

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Published date: 2008
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 267719
URI: https://eprints.soton.ac.uk/id/eprint/267719
PURE UUID: 9d069161-b23c-474e-9e3d-e1ce1517b369

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Date deposited: 29 Jul 2009 11:01
Last modified: 19 Jul 2019 22:17

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