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Control of inter-dot electrostatic coupling in an asymmetric silicon double quantum dot operating at 4.5 K

Yamahata, G., Kodera, T., Mizuta, H., Uchida, K. and Oda, S. (2009) Control of inter-dot electrostatic coupling in an asymmetric silicon double quantum dot operating at 4.5 K Applied Physics Express, 2, (9), 095002-1-095002-4. (doi:10.1143/APEX.2.095002).

Record type: Article


We report on electron transport measurements of a lithographically-defined silicon double quantum dot (DQD) coupled in series with a top gate and side gates. The structure of the top gate coupled uniformly to the DQD is suitable for realizing a few-electron regime. The obtained small DQD enables us to observe a clear honeycomb-like charge stability diagram at a temperature of 4.5 K. The validity of the DQD structure is confirmed by theoretical calculations. Furthermore, we demonstrate successful modulation of the inter-dot electrostatic coupling by the side gate. Externally tunable coupling is essential for practical implementation of spin-based quantum information devices.

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Published date: 21 August 2009
Organisations: Nanoelectronics and Nanotechnology


Local EPrints ID: 267802
PURE UUID: 6f41b5d9-287c-4e74-be8f-a9359886c40b

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Date deposited: 26 Aug 2009 00:42
Last modified: 18 Jul 2017 06:59

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Author: G. Yamahata
Author: T. Kodera
Author: H. Mizuta
Author: K. Uchida
Author: S. Oda

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