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Gallium-diffused waveguides in sapphire

Apostolopoulos, V., Hickey, L.M.B., Sager, D.A. and Wilkinson, J.S. (2001) Gallium-diffused waveguides in sapphire Optics Letters, 26, (20), pp. 1586-1588. (doi:10.1364/OL.26.001586).

Record type: Article


The fabrication and characterisation of gallium-diffused planar waveguides in sapphire is reported. Waveguides were fabricated by diffusion of 60nm - 200nm thick films of gallium oxide into c-cut sapphire at 1600°C for times ranging between 6 and 16 hours. Near-field intensity profiles of the guided modes were measured at wavelengths between 488nm and 850nm, and the surface index elevation was estimated to be up to (0.6±0.02)x10-2. Potential applications for low-threshold Ti:sapphire waveguide lasers and for optical integrated circuits with passive and active elements in sapphire are discussed.

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Published date: 2001
Keywords: Ti-LiNbO3, Wave-Guide Laser
Organisations: Optoelectronics Research Centre, Quantum, Light & Matter Group


Local EPrints ID: 268005
ISSN: 0146-9592
PURE UUID: caaf2d8c-93e2-4403-91ea-ee981d180ec4
ORCID for J.S. Wilkinson: ORCID iD

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Date deposited: 06 Oct 2009 10:16
Last modified: 18 Jul 2017 06:58

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