Gallium-diffused waveguides in sapphire

Apostolopoulos, V., Hickey, L.M.B., Sager, D.A. and Wilkinson, J.S. (2001) Gallium-diffused waveguides in sapphire Optics Letters, 26, (20), pp. 1586-1588. (doi:10.1364/OL.26.001586).


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The fabrication and characterisation of gallium-diffused planar waveguides in sapphire is reported. Waveguides were fabricated by diffusion of 60nm - 200nm thick films of gallium oxide into c-cut sapphire at 1600°C for times ranging between 6 and 16 hours. Near-field intensity profiles of the guided modes were measured at wavelengths between 488nm and 850nm, and the surface index elevation was estimated to be up to (0.6±0.02)x10-2. Potential applications for low-threshold Ti:sapphire waveguide lasers and for optical integrated circuits with passive and active elements in sapphire are discussed.

Item Type: Article
Digital Object Identifier (DOI): doi:10.1364/OL.26.001586
ISSNs: 0146-9592 (print)
Related URLs:
Keywords: Ti-LiNbO3, Wave-Guide Laser
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
ePrint ID: 268005
Date :
Date Event
Date Deposited: 06 Oct 2009 10:16
Last Modified: 05 May 2017 01:33
Further Information:Google Scholar

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