Arab Hassani, Faezeh, Cobianu, Cornel, Armini, Silvia, Petrescu, Violeta, Merken, Patrick, Tsamados, Dimitrios, M. Ionescu, Adrian, Tsuchiya, Yoshishige and Mizuta, Hiroshi
Design and Analysis of an In-Plane Resonant Nano-Electro-Mechanical Sensor for Sub-Attogram-Level Molecular Mass-Detection
At 2009 International Conference on Solid State Devices and Materials (SSDM 2009), Japan.
07 - 09 Oct 2009.
Full text not available from this repository.
This paper presents the In-Plane Resonant NEM (IP R-NEM) sensor based on the mass-detection principle. The proposed sensor features a mass-detection limit of sub atto gram and the sensitivity of the order of zepto gram/Hz, more than eight orders smaller than that of recent QCM-based sensors. The sensor is designed and analyzed using the three-dimensional FEM simulation. Self-assembled linker molecules and adsorbed target molecules on the beam surface are modelled by adding an extra surface coating layer. We study two different surface detection schemes, top-and-bottom and all-around surface detection. The IP R-NEM sensor is integrated with a MOSFET for electrical detection, and the transient response is studied on the system-level using a hybrid electro-mechanical circuit simulation.
Conference or Workshop Item
||Event Dates: 7-9 October
|Venue - Dates:
||2009 International Conference on Solid State Devices and Materials (SSDM 2009), Japan, 2009-10-07 - 2009-10-09
||Nanoelectronics and Nanotechnology
||13 Oct 2009 15:23
||17 Apr 2017 18:38
|Further Information:||Google Scholar|
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