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Fluorine dose effect on the nickel induced lateral crystallization of amorphous silicon

Kai, Sun, Hakim, M.M.A. and Ashburn, P. (2009) Fluorine dose effect on the nickel induced lateral crystallization of amorphous silicon At 39th European Solid-State Device Research Conference (ESSDERC 2009), Greece. 14 - 18 Sep 2009.

Record type: Conference or Workshop Item (Poster)


Recently, Si nanowires have been gaining much attention for applications such as biosensing for medical diagnosis, drug discovery and national security. Currently Si nanowires are fabricated using CMOS technology and often use expensive SOI substrates and electron beam lithography, which seriously limits their use in low cost applications. Polysilicon thin film transistor technology offers the prospect of much lower costs and would be very attractive for products such as disposable diagnostic kits. TFTs are usually fabricated using the crystallization of amorphous Si (?-Si) by solid-phase crystallization, laser crystallization and metal-induced lateral crystallization (MILC). For the creation of polysilicon, Nickel-MILC is attractive for its simplicity, low cost and low process temperature, which is necessary if low cost glass or polymer substrates are to be used. Earlier work showed that fluorine implantation could be used to significantly improve the crystallization length during Nickel-MILC. In this work we investigate the effect of the fluorine implantation dose on the crystallization length, with the aim of further reducing the process temperature. An optimum fluorine dose of 2.5×15 cm-2 is identified, which maximises the crystallization length.

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Published date: 17 September 2009
Venue - Dates: 39th European Solid-State Device Research Conference (ESSDERC 2009), Greece, 2009-09-14 - 2009-09-18
Organisations: Nanoelectronics and Nanotechnology


Local EPrints ID: 268154
PURE UUID: a3ac8344-6092-4e6f-9cd1-f25d9bcb5f52

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Date deposited: 28 Oct 2009 15:45
Last modified: 18 Jul 2017 06:56

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Author: Sun Kai
Author: M.M.A. Hakim
Author: P. Ashburn

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