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Modeling and improvement of a metallization system subjected to fast temperature cycle stress

Record type: Conference or Workshop Item (Paper)

The device failure of DMOS transistors under repetitive inductive load switching is dominated by the thermomechanical deformation of the metallization. The failure evolution is thus experimentally studied with special test structures and highlighted by thermomechanical FEM-simulation. Based on these findings a novel metallization concept is shown, which improves the fast temperature cycle reliability.

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Citation

Smorodin, T., Bohm, C., Gaspar, J., Schmidt, M., Paul, O. and Stecher, M. (2008) Modeling and improvement of a metallization system subjected to fast temperature cycle stress At Proc. International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems EuroSimE 2008. , pp. 1-6.

More information

Published date: 2008
Venue - Dates: Proc. International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems EuroSimE 2008, 2008-01-01
Keywords: MOS integrated circuits, finite element analysis, integrated circuit reliability, semiconductor device metallisation, transistors, DMOS transistors, fast temperature cycle stress, metallization system, repetitive inductive load switching, temperature cycle reliability, thermomechanical FEM-simulation, thermomechanical deformation
Organisations: Electronics & Computer Science

Identifiers

Local EPrints ID: 268260
URI: http://eprints.soton.ac.uk/id/eprint/268260
PURE UUID: cb077eb8-5f97-4b6f-9a8c-6af0f1972d2d

Catalogue record

Date deposited: 25 Nov 2009 13:27
Last modified: 18 Jul 2017 06:56

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Contributors

Author: T. Smorodin
Author: C. Bohm
Author: J. Gaspar
Author: M. Schmidt
Author: O. Paul
Author: M. Stecher

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