Suspended Gate Silicon Nanodot Memory (SGSNM) cell towards Non-Volatile RAM Memories
Suspended Gate Silicon Nanodot Memory (SGSNM) cell towards Non-Volatile RAM Memories
Garcia Ramirez, Mario
6110a5eb-c5bc-4b1c-9cc3-6569e5ae3259
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
1 March 2010
Garcia Ramirez, Mario
6110a5eb-c5bc-4b1c-9cc3-6569e5ae3259
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Garcia Ramirez, Mario, Tsuchiya, Yoshishige and Mizuta, Hiroshi
(2010)
Suspended Gate Silicon Nanodot Memory (SGSNM) cell towards Non-Volatile RAM Memories.
International Symposium on Atom-scale Silicon Hybrid Nanotechnologies for "More than Moore" & "Beyond CMOS" era, held in the University of Southampton, UK, University of Southampton.
Record type:
Conference or Workshop Item
(Poster)
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Published date: 1 March 2010
Venue - Dates:
International Symposium on Atom-scale Silicon Hybrid Nanotechnologies for "More than Moore" & "Beyond CMOS" era, held in the University of Southampton, UK, University of Southampton, 2010-03-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 268773
URI: http://eprints.soton.ac.uk/id/eprint/268773
PURE UUID: effc719d-d140-49fc-bc71-0f2b19e31cc1
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Date deposited: 23 Mar 2010 20:59
Last modified: 10 Dec 2021 23:12
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Contributors
Author:
Mario Garcia Ramirez
Author:
Yoshishige Tsuchiya
Author:
Hiroshi Mizuta
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