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Suspended Gate Silicon Nanodot Memory (SGSNM) cell towards Non-Volatile RAM Memories

Suspended Gate Silicon Nanodot Memory (SGSNM) cell towards Non-Volatile RAM Memories
Suspended Gate Silicon Nanodot Memory (SGSNM) cell towards Non-Volatile RAM Memories
Garcia Ramirez, Mario
6110a5eb-c5bc-4b1c-9cc3-6569e5ae3259
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Garcia Ramirez, Mario
6110a5eb-c5bc-4b1c-9cc3-6569e5ae3259
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9

Garcia Ramirez, Mario, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2010) Suspended Gate Silicon Nanodot Memory (SGSNM) cell towards Non-Volatile RAM Memories. International Symposium on Atom-scale Silicon Hybrid Nanotechnologies for "More than Moore" & "Beyond CMOS" era, held in the University of Southampton, UK.

Record type: Conference or Workshop Item (Poster)

Full text not available from this repository.

More information

Published date: 1 March 2010
Venue - Dates: International Symposium on Atom-scale Silicon Hybrid Nanotechnologies for "More than Moore" & "Beyond CMOS" era, held in the University of Southampton, UK, 2010-03-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 268773
URI: http://eprints.soton.ac.uk/id/eprint/268773
PURE UUID: effc719d-d140-49fc-bc71-0f2b19e31cc1

Catalogue record

Date deposited: 23 Mar 2010 20:59
Last modified: 18 Jul 2017 06:51

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Contributors

Author: Mario Garcia Ramirez
Author: Yoshishige Tsuchiya
Author: Hiroshi Mizuta

University divisions

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