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Voltage-limitation-free analytical single-electron transistor model incorporating the effects of spin-degenerate discrete energy states

Voltage-limitation-free analytical single-electron transistor model incorporating the effects of spin-degenerate discrete energy states
Voltage-limitation-free analytical single-electron transistor model incorporating the effects of spin-degenerate discrete energy states
A physically based analytical single-electron transistor (SET) model is proposed. This model virtually shows no voltage limitation in the scope of the orthodox theory, which makes it particularly suitable for hybrid simulation where the SET is biased by a current source. The model is verified against Monte Carlo simulation with excellent agreement and compared to existing models. It is found that our model is valid and accurate whatever the drain voltage and faster than reported models on the whole. A way to integrate into the model the effects of spin-degenerate quantum energy level discreteness, in the case of a silicon-based SET, is also introduced and observed quantum mechanical effects, such as negative differential conductance, are discussed. (C) 2008 American Institute of Physics.
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Pruvost, B
9e5e3a90-fe6f-467e-ac42-ebfca7811e57
Mizuta, H
f14d5ffc-751b-472b-8dba-c8518c6840b9
Oda, S
514339b3-f8de-4750-8d20-c520834b2477
Pruvost, B
9e5e3a90-fe6f-467e-ac42-ebfca7811e57
Mizuta, H
f14d5ffc-751b-472b-8dba-c8518c6840b9
Oda, S
514339b3-f8de-4750-8d20-c520834b2477

Pruvost, B, Mizuta, H and Oda, S (2008) Voltage-limitation-free analytical single-electron transistor model incorporating the effects of spin-degenerate discrete energy states. Journal of Applied Physics, 103, -.

Record type: Article

Abstract

A physically based analytical single-electron transistor (SET) model is proposed. This model virtually shows no voltage limitation in the scope of the orthodox theory, which makes it particularly suitable for hybrid simulation where the SET is biased by a current source. The model is verified against Monte Carlo simulation with excellent agreement and compared to existing models. It is found that our model is valid and accurate whatever the drain voltage and faster than reported models on the whole. A way to integrate into the model the effects of spin-degenerate quantum energy level discreteness, in the case of a silicon-based SET, is also introduced and observed quantum mechanical effects, such as negative differential conductance, are discussed. (C) 2008 American Institute of Physics.

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More information

Published date: 2008
Additional Information: Imported from ISI Web of Science
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 269201
URI: https://eprints.soton.ac.uk/id/eprint/269201
PURE UUID: 1cce970d-f602-4792-93a8-91a21a90d916

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Date deposited: 21 Apr 2010 07:46
Last modified: 16 Jul 2019 22:21

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Contributors

Author: B Pruvost
Author: H Mizuta
Author: S Oda

University divisions

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