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Controlled Ge nanowires growth on patterned Au catalyst substrate

Controlled Ge nanowires growth on patterned Au catalyst substrate
Controlled Ge nanowires growth on patterned Au catalyst substrate
One-dimensional semiconductor nanostructures have attracted much attention because of their potential applications in the design of novel electronic, photonic, and sensing devices. Due to their high mobility of electrons and holes, Ge nanowires are particularly attractive for high-speed field-effect transistors. Moreover, Ge nanowires are potentially useful for building quantum bits because of a long decoherence time due to a predominance of spin-zero nuclei and the advantage of a large excitonic Bohr radius (24.3 nm) which allows the quantum confinement to be observed for relatively large structures and at high temperatures. To realize these applications on a large scale, one of the key challenges is to develop a convenient and parallel method to align bottom-up nanowires into complex patterns or structures. Recently, a "pick and place" method is most widely used for integrating nanowires. However, these processes lack control in precision, repeatability, and easily induce contamination and defects in the wires. It is expected to selectively grow nanowires directly onto desired areas of the substrate and in situ fabricate the nanowire devices. In the VLS (vapor-liquid-solid) CVD process, gold catalysts initiate and guide the growth of nanowires. Hence, precise control the location of nanowires relies on the capability to control the location of Au clusters. In this paper, we demonstrate the well location-controllable Ge nanowires on SiO/sub 2/ substrate by combining top-down and bottom-up methods.
2 pp.-
IEEE
Li, C.B.
b2763fba-bafc-422d-ba57-22c62bffe86e
Usami, K.
f506146b-9864-482a-bc61-1de94522d32c
Mizuta, H.
f14d5ffc-751b-472b-8dba-c8518c6840b9
Oda, S.
4a88f225-39f6-4c89-a9da-8c35fbfe6fde
Li, C.B.
b2763fba-bafc-422d-ba57-22c62bffe86e
Usami, K.
f506146b-9864-482a-bc61-1de94522d32c
Mizuta, H.
f14d5ffc-751b-472b-8dba-c8518c6840b9
Oda, S.
4a88f225-39f6-4c89-a9da-8c35fbfe6fde

Li, C.B., Usami, K., Mizuta, H. and Oda, S. (2008) Controlled Ge nanowires growth on patterned Au catalyst substrate. In 2008 IEEE Silicon Nanoelectronics Workshop. IEEE. 2 pp.- . (doi:10.1109/SNW.2008.5418417).

Record type: Conference or Workshop Item (Paper)

Abstract

One-dimensional semiconductor nanostructures have attracted much attention because of their potential applications in the design of novel electronic, photonic, and sensing devices. Due to their high mobility of electrons and holes, Ge nanowires are particularly attractive for high-speed field-effect transistors. Moreover, Ge nanowires are potentially useful for building quantum bits because of a long decoherence time due to a predominance of spin-zero nuclei and the advantage of a large excitonic Bohr radius (24.3 nm) which allows the quantum confinement to be observed for relatively large structures and at high temperatures. To realize these applications on a large scale, one of the key challenges is to develop a convenient and parallel method to align bottom-up nanowires into complex patterns or structures. Recently, a "pick and place" method is most widely used for integrating nanowires. However, these processes lack control in precision, repeatability, and easily induce contamination and defects in the wires. It is expected to selectively grow nanowires directly onto desired areas of the substrate and in situ fabricate the nanowire devices. In the VLS (vapor-liquid-solid) CVD process, gold catalysts initiate and guide the growth of nanowires. Hence, precise control the location of nanowires relies on the capability to control the location of Au clusters. In this paper, we demonstrate the well location-controllable Ge nanowires on SiO/sub 2/ substrate by combining top-down and bottom-up methods.

Full text not available from this repository.

More information

Published date: 2008
Additional Information: Imported from ISI Web of Science
Organisations: Nanoelectronics and Nanotechnology

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Local EPrints ID: 269547
URI: https://eprints.soton.ac.uk/id/eprint/269547
PURE UUID: e7d1ffd9-f4a9-41ed-8b77-8893fc11ef23

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Date deposited: 21 Apr 2010 07:46
Last modified: 19 Jul 2019 16:58

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