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Strongly coupled multiple-dot characteristics in dual recess structured silicon channel

Strongly coupled multiple-dot characteristics in dual recess structured silicon channel
Strongly coupled multiple-dot characteristics in dual recess structured silicon channel
Silicon single electron transistors were fabricated by using the highly doped silicon channel with dual recess structure along with two recess gates and one central island gate as a pattern. The transition of Coulomb oscillation characteristics from a single dot to a strongly coupled multiple dot was demonstrated for the different oxidation times and recess dimensions. The multiple-dot characteristic in the longer post lithography oxidized sample is attributed to the formation of a single dot in each recess due to the stress induced pattern-dependent oxidation, which leads to multiple dot in the channel. The temperature variation measurement, which was performed after two thermal cycling of the same sample to 20 and 4.2 K with 1 month gap, revealed the highly stable nature of the multiple-dot device transport characteristics. The multiple-dot device can also be operated as a unique nonlinear tunable resistance single electron transistor. (c) 2008 American Institute of Physics.
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Manoharan, M
aac463c9-3218-4fac-9a70-57c5b05ece93
Kawata, Y
6931866a-bb5b-4a51-b244-61200ae78b8a
Tsuchiya, Y
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Oda, S
514339b3-f8de-4750-8d20-c520834b2477
Mizuta, H
f14d5ffc-751b-472b-8dba-c8518c6840b9
Manoharan, M
aac463c9-3218-4fac-9a70-57c5b05ece93
Kawata, Y
6931866a-bb5b-4a51-b244-61200ae78b8a
Tsuchiya, Y
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Oda, S
514339b3-f8de-4750-8d20-c520834b2477
Mizuta, H
f14d5ffc-751b-472b-8dba-c8518c6840b9

Manoharan, M, Kawata, Y, Tsuchiya, Y, Oda, S and Mizuta, H (2008) Strongly coupled multiple-dot characteristics in dual recess structured silicon channel. Journal of Applied Physics, 103, -.

Record type: Article

Abstract

Silicon single electron transistors were fabricated by using the highly doped silicon channel with dual recess structure along with two recess gates and one central island gate as a pattern. The transition of Coulomb oscillation characteristics from a single dot to a strongly coupled multiple dot was demonstrated for the different oxidation times and recess dimensions. The multiple-dot characteristic in the longer post lithography oxidized sample is attributed to the formation of a single dot in each recess due to the stress induced pattern-dependent oxidation, which leads to multiple dot in the channel. The temperature variation measurement, which was performed after two thermal cycling of the same sample to 20 and 4.2 K with 1 month gap, revealed the highly stable nature of the multiple-dot device transport characteristics. The multiple-dot device can also be operated as a unique nonlinear tunable resistance single electron transistor. (c) 2008 American Institute of Physics.

Full text not available from this repository.

More information

Published date: 2008
Additional Information: Imported from ISI Web of Science
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 269584
URI: https://eprints.soton.ac.uk/id/eprint/269584
PURE UUID: 0926c0d2-6548-42f2-b32b-3d5703d19ce0

Catalogue record

Date deposited: 21 Apr 2010 07:46
Last modified: 16 Jul 2019 22:20

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