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Synthesis of Assembled Nanocrystalline Si Dots Film by the Langmuir-Blodgett Technique

Synthesis of Assembled Nanocrystalline Si Dots Film by the Langmuir-Blodgett Technique
Synthesis of Assembled Nanocrystalline Si Dots Film by the Langmuir-Blodgett Technique
We report on a new bottom-up technique for forming silicon nanostructures based on the assembly of nanocrystalline Si (nc-Si) dots by the Langmuir-Blodgett technique. nc-Si dots with a diameter of 10 +/- 1 nm fabricated by a very high frequency (VHF) plasma process are dispersed in solvent and functionalized with an appropriate silane coupling agent. After compression at the surface of a Langmuir trough to form a well-organized two-dimensional array, nc-Si dots are transferred onto Si substrates. We have succeeded in forming a well-assembled nc-Si dot array with an area density of 7.33 x 10(11) cm(-2). Furthermore, we clarified what happens at the surface of a Langmuir trough based by analyzing surface pressure-area isotherms. [DOI: 10.1143/JJAP.47.3731]
0021-4922
3731-3734
Tanaka, A
fa5fbcd0-ee49-4fcd-a6f5-6ced631b3e12
Tsuchiya, Y
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Usami, K
9c9e150c-6d0f-4710-a534-2bfda5d012fa
Saito, S
71a96de6-98f9-44c8-9dfb-fdce77a0c4fb
Arai, T
06848986-21e7-4ba5-b2a0-36924dfaebe6
Mizuta, H
f14d5ffc-751b-472b-8dba-c8518c6840b9
Oda, S
514339b3-f8de-4750-8d20-c520834b2477
Tanaka, A
fa5fbcd0-ee49-4fcd-a6f5-6ced631b3e12
Tsuchiya, Y
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Usami, K
9c9e150c-6d0f-4710-a534-2bfda5d012fa
Saito, S
71a96de6-98f9-44c8-9dfb-fdce77a0c4fb
Arai, T
06848986-21e7-4ba5-b2a0-36924dfaebe6
Mizuta, H
f14d5ffc-751b-472b-8dba-c8518c6840b9
Oda, S
514339b3-f8de-4750-8d20-c520834b2477

Tanaka, A, Tsuchiya, Y, Usami, K, Saito, S, Arai, T, Mizuta, H and Oda, S (2008) Synthesis of Assembled Nanocrystalline Si Dots Film by the Langmuir-Blodgett Technique. Japanese Journal of Applied Physics, 47, 3731-3734.

Record type: Article

Abstract

We report on a new bottom-up technique for forming silicon nanostructures based on the assembly of nanocrystalline Si (nc-Si) dots by the Langmuir-Blodgett technique. nc-Si dots with a diameter of 10 +/- 1 nm fabricated by a very high frequency (VHF) plasma process are dispersed in solvent and functionalized with an appropriate silane coupling agent. After compression at the surface of a Langmuir trough to form a well-organized two-dimensional array, nc-Si dots are transferred onto Si substrates. We have succeeded in forming a well-assembled nc-Si dot array with an area density of 7.33 x 10(11) cm(-2). Furthermore, we clarified what happens at the surface of a Langmuir trough based by analyzing surface pressure-area isotherms. [DOI: 10.1143/JJAP.47.3731]

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More information

Published date: 2008
Additional Information: Imported from ISI Web of Science
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 269598
URI: http://eprints.soton.ac.uk/id/eprint/269598
ISSN: 0021-4922
PURE UUID: 9b5e1487-ef1f-4994-92b2-6ecbe925ce48

Catalogue record

Date deposited: 21 Apr 2010 07:46
Last modified: 08 Nov 2021 21:48

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Contributors

Author: A Tanaka
Author: Y Tsuchiya
Author: K Usami
Author: S Saito
Author: T Arai
Author: H Mizuta
Author: S Oda

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