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Field-dependant hopping conduction in silicon nanocrystal films

Field-dependant hopping conduction in silicon nanocrystal films
Field-dependant hopping conduction in silicon nanocrystal films
We investigate the electric field dependence of hopping conduction in 300 nm thick films of similar to 8 nm diameter silicon nanocrystals. The hopping conductivity sigma follows a ln(sigma)proportional to 1/T-1/2 dependence with temperature T, explained by a percolation hopping conduction model. At high fields F>similar to 1x10(5) V/cm, the hopping conductivity follows a ln(sigma)proportional to F-1/2 dependence. This dependence is investigated using the concept of "effective temperature," introduced originally by Shklovskii for hopping conduction in disordered materials.
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Rafiq, MA
ff44a419-c3e8-4abe-9186-183814ccb6d9
Durrani, ZAK
6bcf438c-7d18-47cd-97fc-6690c28c89b9
Mizuta, H
f14d5ffc-751b-472b-8dba-c8518c6840b9
Hassan, MM
69cf8ea6-b214-41c5-afc6-29c0df366246
Oda, S
514339b3-f8de-4750-8d20-c520834b2477
Rafiq, MA
ff44a419-c3e8-4abe-9186-183814ccb6d9
Durrani, ZAK
6bcf438c-7d18-47cd-97fc-6690c28c89b9
Mizuta, H
f14d5ffc-751b-472b-8dba-c8518c6840b9
Hassan, MM
69cf8ea6-b214-41c5-afc6-29c0df366246
Oda, S
514339b3-f8de-4750-8d20-c520834b2477

Rafiq, MA, Durrani, ZAK, Mizuta, H, Hassan, MM and Oda, S (2008) Field-dependant hopping conduction in silicon nanocrystal films. Journal of Applied Physics, 104, -.

Record type: Article

Abstract

We investigate the electric field dependence of hopping conduction in 300 nm thick films of similar to 8 nm diameter silicon nanocrystals. The hopping conductivity sigma follows a ln(sigma)proportional to 1/T-1/2 dependence with temperature T, explained by a percolation hopping conduction model. At high fields F>similar to 1x10(5) V/cm, the hopping conductivity follows a ln(sigma)proportional to F-1/2 dependence. This dependence is investigated using the concept of "effective temperature," introduced originally by Shklovskii for hopping conduction in disordered materials.

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More information

Published date: 2008
Additional Information: Imported from ISI Web of Science
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 269709
URI: https://eprints.soton.ac.uk/id/eprint/269709
PURE UUID: 0abc8824-298f-415a-8d3d-fcbbae203847

Catalogue record

Date deposited: 21 Apr 2010 07:46
Last modified: 16 Jul 2019 22:20

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Contributors

Author: MA Rafiq
Author: ZAK Durrani
Author: H Mizuta
Author: MM Hassan
Author: S Oda

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