Is it possible to avoid uncontrolled multiple tunnel junctions induced by random dopants in heavily-doped silicon single-electron transistors?
Is it possible to avoid uncontrolled multiple tunnel junctions induced by random dopants in heavily-doped silicon single-electron transistors?
The SEDs with relatively long constriction regions invariably exhibit the MTJ characteristics due to the dopant induced potential fluctuation. We clarified that the formation of such uncontrolled MTJs can be avoided by making the constrictions extremely short and with low surface roughness.
2 pp.-
Manoharan, M.
5b5a3df4-7677-4c9b-bdca-c6b8f31e97e6
Tsuchiya, Y.
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Oda, S.
4a88f225-39f6-4c89-a9da-8c35fbfe6fde
Mizuta, H.
f14d5ffc-751b-472b-8dba-c8518c6840b9
2008
Manoharan, M.
5b5a3df4-7677-4c9b-bdca-c6b8f31e97e6
Tsuchiya, Y.
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Oda, S.
4a88f225-39f6-4c89-a9da-8c35fbfe6fde
Mizuta, H.
f14d5ffc-751b-472b-8dba-c8518c6840b9
Manoharan, M., Tsuchiya, Y., Oda, S. and Mizuta, H.
(2008)
Is it possible to avoid uncontrolled multiple tunnel junctions induced by random dopants in heavily-doped silicon single-electron transistors?
In 2008 IEEE Silicon Nanoelectronics Workshop.
IEEE.
.
(doi:10.1109/SNW.2008.5418435).
Record type:
Conference or Workshop Item
(Paper)
Abstract
The SEDs with relatively long constriction regions invariably exhibit the MTJ characteristics due to the dopant induced potential fluctuation. We clarified that the formation of such uncontrolled MTJs can be avoided by making the constrictions extremely short and with low surface roughness.
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Published date: 2008
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Organisations:
Nanoelectronics and Nanotechnology
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Local EPrints ID: 269917
URI: http://eprints.soton.ac.uk/id/eprint/269917
PURE UUID: 851ed3c9-7b0a-459c-92d4-61e843306f3f
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Date deposited: 21 Apr 2010 07:46
Last modified: 15 Mar 2024 21:47
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Author:
M. Manoharan
Author:
Y. Tsuchiya
Author:
S. Oda
Author:
H. Mizuta
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