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Is it possible to avoid uncontrolled multiple tunnel junctions induced by random dopants in heavily-doped silicon single-electron transistors?

Is it possible to avoid uncontrolled multiple tunnel junctions induced by random dopants in heavily-doped silicon single-electron transistors?
Is it possible to avoid uncontrolled multiple tunnel junctions induced by random dopants in heavily-doped silicon single-electron transistors?
The SEDs with relatively long constriction regions invariably exhibit the MTJ characteristics due to the dopant induced potential fluctuation. We clarified that the formation of such uncontrolled MTJs can be avoided by making the constrictions extremely short and with low surface roughness.
2 pp.-
IEEE
Manoharan, M.
5b5a3df4-7677-4c9b-bdca-c6b8f31e97e6
Tsuchiya, Y.
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Oda, S.
4a88f225-39f6-4c89-a9da-8c35fbfe6fde
Mizuta, H.
f14d5ffc-751b-472b-8dba-c8518c6840b9
Manoharan, M.
5b5a3df4-7677-4c9b-bdca-c6b8f31e97e6
Tsuchiya, Y.
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Oda, S.
4a88f225-39f6-4c89-a9da-8c35fbfe6fde
Mizuta, H.
f14d5ffc-751b-472b-8dba-c8518c6840b9

Manoharan, M., Tsuchiya, Y., Oda, S. and Mizuta, H. (2008) Is it possible to avoid uncontrolled multiple tunnel junctions induced by random dopants in heavily-doped silicon single-electron transistors? In 2008 IEEE Silicon Nanoelectronics Workshop. IEEE. 2 pp.- . (doi:10.1109/SNW.2008.5418435).

Record type: Conference or Workshop Item (Paper)

Abstract

The SEDs with relatively long constriction regions invariably exhibit the MTJ characteristics due to the dopant induced potential fluctuation. We clarified that the formation of such uncontrolled MTJs can be avoided by making the constrictions extremely short and with low surface roughness.

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More information

Published date: 2008
Additional Information: Imported from ISI Web of Science
Organisations: Nanoelectronics and Nanotechnology

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Local EPrints ID: 269917
URI: http://eprints.soton.ac.uk/id/eprint/269917
PURE UUID: 851ed3c9-7b0a-459c-92d4-61e843306f3f

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Date deposited: 21 Apr 2010 07:46
Last modified: 09 Nov 2021 14:10

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Contributors

Author: M. Manoharan
Author: Y. Tsuchiya
Author: S. Oda
Author: H. Mizuta

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