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High density p-type Bi0.5Sb1.5Te3 nanowires by electrochemical templating through ion-track lithography

High density p-type Bi0.5Sb1.5Te3 nanowires by electrochemical templating through ion-track lithography
High density p-type Bi0.5Sb1.5Te3 nanowires by electrochemical templating through ion-track lithography
High density p-type Bi0.5Sb1.5Te3 nanowire arrays are produced by a combination of electrodeposition and ion-track lithography technology. Initially, the electrodeposition of p-type wBi(0.5)Sb(1.5)Te(3) films is investigated to find out the optimal conditions for the deposition of nanowires. Polyimide-based Kapton foils are chosen as a polymer for ion track irradiation and nanotemplating Bi0.5Sb1.5Te3 nanowires. The obtained nanowires have average diameters of 80 nm and lengths of 20 mu m, which are equivalent to the pore size and thickness of Kapton foils. The nanowires exhibit a preferential orientation along the {110} plane with a composition of 11.26 at.% Bi, 26.23 at.% Sb, and 62.51 at.% Te. Temperature dependence studies of the electrical resistance show the semiconducting nature of the nanowires with a negative temperature coefficient of resistance and band gap energy of 0.089 +/- 0.006 eV.
3584-3590
Li, XH
3554406e-b7a8-4a5b-944e-a816ec61dfe7
Koukharenko, E
c8cc1506-9caf-4ff4-8957-e6ed87514e19
Nandhakumar, IS
d7f9f326-e74d-4b9b-a48b-de431deea29e
Tudor, J
a78ba3ef-d476-404c-ac7a-5d2a1ee6c421
Beeby, SP
ba565001-2812-4300-89f1-fe5a437ecb0d
White, NM
c7be4c26-e419-4e5c-9420-09fc02e2ac9c
Li, XH
3554406e-b7a8-4a5b-944e-a816ec61dfe7
Koukharenko, E
c8cc1506-9caf-4ff4-8957-e6ed87514e19
Nandhakumar, IS
d7f9f326-e74d-4b9b-a48b-de431deea29e
Tudor, J
a78ba3ef-d476-404c-ac7a-5d2a1ee6c421
Beeby, SP
ba565001-2812-4300-89f1-fe5a437ecb0d
White, NM
c7be4c26-e419-4e5c-9420-09fc02e2ac9c

Li, XH, Koukharenko, E, Nandhakumar, IS, Tudor, J, Beeby, SP and White, NM (2009) High density p-type Bi0.5Sb1.5Te3 nanowires by electrochemical templating through ion-track lithography. Physical Chemistry Chemical Physics, 11, 3584-3590.

Record type: Article

Abstract

High density p-type Bi0.5Sb1.5Te3 nanowire arrays are produced by a combination of electrodeposition and ion-track lithography technology. Initially, the electrodeposition of p-type wBi(0.5)Sb(1.5)Te(3) films is investigated to find out the optimal conditions for the deposition of nanowires. Polyimide-based Kapton foils are chosen as a polymer for ion track irradiation and nanotemplating Bi0.5Sb1.5Te3 nanowires. The obtained nanowires have average diameters of 80 nm and lengths of 20 mu m, which are equivalent to the pore size and thickness of Kapton foils. The nanowires exhibit a preferential orientation along the {110} plane with a composition of 11.26 at.% Bi, 26.23 at.% Sb, and 62.51 at.% Te. Temperature dependence studies of the electrical resistance show the semiconducting nature of the nanowires with a negative temperature coefficient of resistance and band gap energy of 0.089 +/- 0.006 eV.

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More information

Published date: 2009
Additional Information: Imported from ISI Web of Science
Organisations: EEE

Identifiers

Local EPrints ID: 270018
URI: https://eprints.soton.ac.uk/id/eprint/270018
PURE UUID: 3730abdd-4ed8-4ad0-8b6f-1e6293a2d93e
ORCID for SP Beeby: ORCID iD orcid.org/0000-0002-0800-1759
ORCID for NM White: ORCID iD orcid.org/0000-0003-1532-6452

Catalogue record

Date deposited: 21 Apr 2010 07:46
Last modified: 06 Jun 2018 13:12

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