Carrier transport by field enhanced thermal detrapping in Si nanocrystals thin films
Carrier transport by field enhanced thermal detrapping in Si nanocrystals thin films
The carrier transport at high voltage region in Si nanocrystal (SiNC) thin films has been investigated. The current-voltage measurements demonstrate that at high voltage region, conductance exponentially depends on V1/2. The activation energy, measured from the temperature dependence of the current-voltage (I-V) characteristics, decreases with an increase in the applied voltage. These results indicate that field enhanced detrapping dominates transport mechanism in the SiNC films at high voltage region. The possible influence of metal/semiconductor contacts on V1/2 dependence has been excluded through the activation energy measurement on different work-function metals as electrodes. The position of the traps contributing to the detrapping processes is concluded to be at interfaces of SiNC/SiO2 since H2 annealing drastically decreases the activation energy. The reasons why experimental results demonstrate no accordance with the material parameter V* of Poole-Frenkel expression have been discussed based on nanostructure characteristics of SiNC film.
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Zhou, X
4ef9e49f-f25d-4b39-b1d5-ea5a49d5ad64
Uchida, K
94591838-45bd-426b-91da-f9d60a055c6c
Mizuta, H
f14d5ffc-751b-472b-8dba-c8518c6840b9
Oda, S
514339b3-f8de-4750-8d20-c520834b2477
25 June 2009
Zhou, X
4ef9e49f-f25d-4b39-b1d5-ea5a49d5ad64
Uchida, K
94591838-45bd-426b-91da-f9d60a055c6c
Mizuta, H
f14d5ffc-751b-472b-8dba-c8518c6840b9
Oda, S
514339b3-f8de-4750-8d20-c520834b2477
Zhou, X, Uchida, K, Mizuta, H and Oda, S
(2009)
Carrier transport by field enhanced thermal detrapping in Si nanocrystals thin films.
Journal of Applied Physics, 105, .
(doi:10.1063/1.3151688).
Abstract
The carrier transport at high voltage region in Si nanocrystal (SiNC) thin films has been investigated. The current-voltage measurements demonstrate that at high voltage region, conductance exponentially depends on V1/2. The activation energy, measured from the temperature dependence of the current-voltage (I-V) characteristics, decreases with an increase in the applied voltage. These results indicate that field enhanced detrapping dominates transport mechanism in the SiNC films at high voltage region. The possible influence of metal/semiconductor contacts on V1/2 dependence has been excluded through the activation energy measurement on different work-function metals as electrodes. The position of the traps contributing to the detrapping processes is concluded to be at interfaces of SiNC/SiO2 since H2 annealing drastically decreases the activation energy. The reasons why experimental results demonstrate no accordance with the material parameter V* of Poole-Frenkel expression have been discussed based on nanostructure characteristics of SiNC film.
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1.3151688
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Text
1.3151688
- Version of Record
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Published date: 25 June 2009
Additional Information:
Imported from ISI Web of Science
Organisations:
Nanoelectronics and Nanotechnology
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Local EPrints ID: 270118
URI: http://eprints.soton.ac.uk/id/eprint/270118
PURE UUID: c348de00-7ff4-431e-90c3-88489e1c7c03
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Date deposited: 21 Apr 2010 07:46
Last modified: 14 Mar 2024 09:16
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Author:
X Zhou
Author:
K Uchida
Author:
H Mizuta
Author:
S Oda
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