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Control of Inter-Dot Electrostatic Coupling by a Side Gate in a Silicon Double Quantum Dot Operating at 4.5 K

Record type: Article

We report on electron transport measurements of a lithographically-defined silicon double quantum dot (DQD) coupled in series with a top gate and side gates. The structure of the top gate coupled uniformly to the DQD is suitable for realizing a few-electron regime. The obtained small DQD enables us to observe a clear honeycomb-like charge stability diagram at a temperature of 4.5 K. The validity of the DQD structure is confirmed by theoretical calculations. Furthermore, we demonstrate successful modulation of the inter-dot electrostatic coupling by the side gate. Externally tunable coupling is essential for practical implementation of spin-based quantum information devices. (C) 2009 The Japan Society of Applied Physics

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Citation

Yamahata, G, Kodera, T, Mizuta, H, Uchida, K and Oda, S (2009) Control of Inter-Dot Electrostatic Coupling by a Side Gate in a Silicon Double Quantum Dot Operating at 4.5 K Applied Physics Express, 2, -.

More information

Published date: 2009
Additional Information: Imported from ISI Web of Science
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 270263
URI: http://eprints.soton.ac.uk/id/eprint/270263
PURE UUID: 99f17db9-7198-491d-b67a-c194ca3bf90b

Catalogue record

Date deposited: 21 Apr 2010 07:46
Last modified: 18 Jul 2017 06:51

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Contributors

Author: G Yamahata
Author: T Kodera
Author: H Mizuta
Author: K Uchida
Author: S Oda

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